SUM110N06-3M9H-E3 Siliconix / Vishay, SUM110N06-3M9H-E3 Datasheet - Page 2

• Manufacturer Part Number: SUM110N06-3M9H-E3
• Description: MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.00325Ohm; ID 110A; TO-263; PD 375W; VGS +/-20V
• Manufacturer: Siliconix / Vishay

Specifications of SUM110N06-3M9H-E3

• Application: Automotive such as high-side switch, motor drives, 12 V battery
• Channel Type: N-Channel
• Current, Drain: 110 A
• Fall Time: 14 nS
• Gate Charge, Total: 200 nC
• Mounting And Package Type: PCB Mount and TO-263
• Operating And Storage Temperature: -55 to +175 °C
• Package Type: TO-263
• Polarization: N-Channel
• Power Dissipation: 375 W
• Resistance, Drain To Source On: 0.00325 Ohm
• Resistance, Thermal, Junction To Case: 0.4 °C⁄W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 40 °C⁄W
• Time, Rise: 160 nS
• Time, Turn-off Delay: 75 ns
• Time, Turn-on Delay: 45 ns
• Transconductance, Forward: 30 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: 1.1 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SUM110N06-3m9H
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
b
c
a
c
c
c
c
c
a
a
J
= 25 °C, unless otherwise noted
a
V
I
Symbol
RM(REC)
V
r
(BR)DSS
I
DS(on)
t
t
I
C
I
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
Q
g
R
SM
I
t
oss
t
t
rss
SD
iss
S
rr
fs
gs
gd
r
f
g
rr
g
C
I
V
V
V
D
V
V
V
= 25 °C)
DS
DS
DS
GS
GS
≅ 110 A, V
GS
I
= 60 V, V
= 60 V, V
= 30 V, V
= 10 V, I
= 10 V, I
F
V
V
V
= 0 V, V
V
V
V
V
DD
= 85 A, di/dt = 100 A/µs
DS
V
DS
I
GS
DS
F
DS
DS
GS
Test Conditions
b
= 85 A, V
= 0 V, V
= 30 V, R
= V
= 0 V, I
= 60 V, V
≥ 5 V, V
= 10 V, I
= 15 V, I
f = 1 MHz
GEN
D
D
GS
DS
GS
GS
GS
= 30 A, T
= 30 A, T
, I
= 25 V, f = 1 MHz
= 0 V, T
= 0 V, T
= 10 V, I
= 10 V, R
D
GS
D
GS
GS
L
= 250 µA
D
D
GS
= 250 µA
= 0.27 Ω
= ± 20 V
= 30 A
= 30 A
= 10 V
= 0 V
= 0 V
J
J
J
J
D
= 125 °C
= 175 °C
= 125 °C
= 175 °C
g
= 110 A
= 2.5 Ω
Min
120
3.4
0.6
60
30
0.00325
15 800
1050
Typ
600
200
160
143
1.2
1.1
4.4
80
45
45
75
14
65
0.0039
0.0063
0.0082
Max
100
250
300
240
115
110
240
100
330
4.5
1.8
1.5
6.6
50
70
25
1
Unit
nA
µA
pF
nC
nC
ns
ns
Ω
Ω
V
A
S
A
V
A