SUP90P06-09L-E3 Siliconix / Vishay, SUP90P06-09L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUP90P06-09L-E3
• Description: P-CHANNEL 60-V (D-S) 175C MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SUP90P06-09L-E3

• Channel Type: P
• Current, Drain: –90 A
• Fall Time: 450 ns
• Operating And Storage Temperature: –55 to +175 °C
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 250 W
• Resistance, Thermal, Junction To Case: 0.6 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 62 °C/W
• Time, Rise: 285 ns
• Time, Turn-off Delay: 210 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 20 S
• Voltage, Breakdown, Drain To Source: –60 V
• Voltage, Diode Forward: –1.5 V
• Voltage, Drain To Source: –60 V
• Voltage, Forward, Diode: –1.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

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4
SUP90P06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
2.0
1.7
1.4
1.1
0.8
0.5
100
0.1
10
0.0001
−50 −25
1
I
V
I
AV
On-Resistance vs. Junction Temperature
D
GS
= 30 A
(A) @ T
= 10 V
0.001
T
0
Avalanche Current vs. Time
J
− Junction Temperature (_C)
A
= 150_C
25
I
AV
50
t
in
0.01
(A) @ T
(Sec)
75
A
100
= 25_C
0.1
125
150
175
1
New Product
100
10
76
72
68
64
60
56
1
−50 −25
0.0
Source-Drain Diode Forward Voltage
I
D
= 10 mA
V
T
0
T
SD
0.3
J
Drain Source Breakdown vs.
J
= 150_C
− Junction Temperature (_C)
− Source-to-Drain Voltage (V)
Junction Temperature
25
50
0.6
75
S-41203—Rev. A, 21-Jun-04
Document Number: 73010
100
T
0.9
125
J
= 25_C
150
175
1.2