NTE2392 NTE Electronics, Inc., NTE2392 Datasheet - Page 2

• Manufacturer Part Number: NTE2392
• Description: MOSFET; N-Ch; VDSS 100V; RDS(ON) 0.045Ohm; ID 40A; TO-3; PD 150W; VGS +/-20V; gFS 11Mhos
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE2392

• Application: Switching mode power supplies, uninterruptible power supplies and motor speed control
• Channel Type: N-Channel
• Current, Drain: 40 A
• Fall Time: 100 ns (Max.)
• Gate Charge, Total: 63 nC
• Operating And Storage Temperature: -55 to +150 °C
• Package Type: TO-3
• Polarization: N-Channel
• Power Dissipation: 150 W
• Resistance, Drain To Source On: 0.045 Ohm
• Resistance, Thermal, Junction To Case: 0.83 °C⁄W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 30 °C⁄W
• Time, Rise: 100 ns (Max.)
• Time, Turn-off Delay: 125 ns
• Time, Turn-on Delay: 35 ns
• Transconductance, Forward: 11 Mhos
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Diode Forward: 2.5 V (Max.)
• Voltage, Drain To Gate: 100 V
• Voltage, Forward, Diode: 2.5 V
• Voltage, Gate To Source: ±20 V

Electrical Characteristics: (T
Note 2. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Drain−Source Breakdown Voltage
Zero−Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage
On−State Drain Current
Static Drain−Source On Resistance
Forward Transconductance
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
Turn−On Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain (“Miller”) Charge
Internal Drain Inductance
Internal Source Inductance
Source−Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed Source Current (Body Diode)
Forward ON Voltage
Reverse Recovery Time
Reverse Recovered Charge
(Body Diode)
Parameter
C
= +25°C unless otherwise specified)
V
Symbol
R
V
(BR)DSS
I
t
t
I
I
C
DS(on)
C
GS(th)
D(on)
C
V
d(on)
d(off)
Q
Q
I
DSS
GSS
Q
Q
g
L
L
SM
I
t
oss
t
t
SD
rss
iss
S
rr
fs
gs
gd
r
f
D
S
rr
g
I
V
V
T
V
V
V
V
V
V
I
V
V
V
V
V
Measured between the contact
screw on header that is closer to
source and gate pins and center of
die
Measured from the source pin,
6mm (.25 in.) from header
Note 3
I
Note 3
I
T
T
D
D
S
F
F
C
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
DS
DD
DD
GS
GS
DS
DS
= 40A, di
= 40A, V
= 250µA, V
= 20A, Note 2
= +150°C
= +150°C
= +125°C
= 0, V
= V
> I
> I
= 25V, V
= 24V, I
= 80V
= 80V
= 0, V
= 0, V
= 10V, Note 2
= 10V, I
= 10V, I
D(on)
D(on)
Test Conditions
GS
GS
DS
DS
, I
GS
F
F
x R
D
x R
D
D
D
D
/dt = 100A/µs,
D
GS
GS
GS
= 100V
= 80V,
= ±20V
= 20A, Note 2
= 20A, R
= 50A,
= 0, T
= 250µA
DS(on) max
DS(on) max
= 0, f = 1MHz
= 0
J
= +25°C,
I
I
= 4.7Ω
,
,
Min
100
40
−
−
−
2
−
9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.045
2000
1000
12.5
Typ
350
600
5.0
3.3
63
27
36
11
−
−
−
−
−
−
−
−
−
−
−
−
−
0.055
1000
±100
3000
1500
Max
250
500
100
125
100
120
160
2.5
35
40
−
4
−
−
−
−
−
−
−
−
Unit
mho
µC
µA
µA
nA
nC
nC
nC
nH
nH
ns
ns
ns
ns
ns
W
pf
pf
pf
V
V
A
A
A
V