IRFBC40APBF Vishay PCS, IRFBC40APBF Datasheet - Page 2

• Manufacturer Part Number: IRFBC40APBF
• Description: MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 1.2 Ohms; ID 6.2A; TO-220AB; PD 125W; VGS +/-30
• Manufacturer: Vishay PCS

Specifications of IRFBC40APBF

• Current, Drain: 6.2 A
• Gate Charge, Total: 42 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 125 W
• Resistance, Drain To Source On: 1.2 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 31 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 3.4 S
• Voltage, Breakdown, Drain To Source: 600 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Static @ T
Avalanche Characteristics
Thermal Resistance
Dynamic @ T
Diode Characteristics
I
I
E
I
E
R
R
R
V
∆V
R
V
I
I
V
t
Q
t
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
DSS
GSS
AR
on
S
SM
d(on)
d(off)
f
rr
r
AS
AR
fs
θJA
GS(th)
θJC
θCS
SD
(BR)DSS
DS(on)
oss
oss
oss
gd
iss
rss
oss
g
gs
rr
(BR)DSS
eff.
/∆T
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
600
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
3.4
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
1036 –––
1487 –––
0.66 –––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
136
–––
–––
–––
431
–––
7.0
1.8
13
23
31
18
36
48
–––
250
100
–––
647
–––
–––
–––
–––
–––
–––
–––
–––
1.5
2.8
1.2
4.0
6.2
25
42
10
20
25
V/°C
µC
nC
ns
µA
nA
pF
ns
Ω
V
V
V
S
Typ.
Typ.
0.50
–––
–––
–––
–––
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
ƒ = 1.0MHz, See Fig. 5
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
V
I
R
R
V
V
V
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
GS
G
D
= 6.2A
= 6.2A
= 25°C, I
= 25°C, I
= 9.1Ω
= 47Ω,See Fig. 10
= V
= 600V, V
= 30V
= 0V, I
= 10V, I
= 480V, V
= -30V
= 50V, I
= 480V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
= 10V, See Fig. 6 and 13 „
= 300V
GS
, I
D
S
F
DS
D
D
D
DS
DS
= 250µA
Conditions
= 6.2A, V
= 6.2A
Conditions
= 250µA
Conditions
= 3.7A „
= 3.7A
GS
GS
= 0V to 480V …
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 480V, ƒ = 1.0MHz
570
–––
6.2
1.0
62
13
= 0V
= 0V, T
D
= 1mA†
GS
„
J
G
= 0V „
= 125°C
Units
Units
°C/W
S
mJ
mJ
+L
A
D
S
D
)
2