IRFBC40APBF Vishay PCS, IRFBC40APBF Datasheet - Page 2
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IRFBC40APBF
Manufacturer Part Number
IRFBC40APBF
Description
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 1.2 Ohms; ID 6.2A; TO-220AB; PD 125W; VGS +/-30
Manufacturer
Vishay PCS
Datasheet
1.IRFBC40APBF.pdf
(3 pages)
Specifications of IRFBC40APBF
Current, Drain
6.2 A
Gate Charge, Total
42 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
1.2 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
31 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
3.4 S
Voltage, Breakdown, Drain To Source
600 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBC40APBF
Manufacturer:
M/A-COM
Quantity:
5 000
Part Number:
IRFBC40APBF
Manufacturer:
IR墨西哥
Quantity:
20 000
Static @ T
Avalanche Characteristics
Thermal Resistance
Dynamic @ T
Diode Characteristics
I
I
E
I
E
R
R
R
V
∆V
R
V
I
I
V
t
Q
t
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
DSS
GSS
AR
on
S
SM
d(on)
d(off)
f
rr
r
AS
AR
fs
θJA
GS(th)
θJC
θCS
SD
(BR)DSS
DS(on)
oss
oss
oss
gd
iss
rss
oss
g
gs
rr
(BR)DSS
eff.
/∆T
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
600
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
3.4
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
1036 –––
1487 –––
0.66 –––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
136
–––
–––
–––
431
–––
7.0
1.8
13
23
31
18
36
48
–––
250
100
–––
647
–––
–––
–––
–––
–––
–––
–––
–––
1.5
2.8
1.2
4.0
6.2
25
42
10
20
25
V/°C
µC
nC
ns
µA
nA
pF
ns
Ω
V
V
V
S
Typ.
Typ.
0.50
–––
–––
–––
–––
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
ƒ = 1.0MHz, See Fig. 5
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
I
R
R
V
V
V
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
GS
G
D
= 6.2A
= 6.2A
= 25°C, I
= 25°C, I
= 9.1Ω
= 47Ω,See Fig. 10
= V
= 600V, V
= 30V
= 0V, I
= 10V, I
= 480V, V
= -30V
= 50V, I
= 480V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
= 10V, See Fig. 6 and 13
= 300V
GS
, I
D
S
F
DS
D
D
D
DS
DS
= 250µA
Conditions
= 6.2A, V
= 6.2A
Conditions
= 250µA
Conditions
= 3.7A
= 3.7A
GS
GS
= 0V to 480V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 480V, ƒ = 1.0MHz
570
–––
6.2
1.0
62
13
= 0V
= 0V, T
D
= 1mA
GS
J
G
= 0V
= 125°C
Units
Units
°C/W
S
mJ
mJ
+L
A
D
S
D
)
2