IRFBC40APBF Vishay PCS, IRFBC40APBF Datasheet - Page 3
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IRFBC40APBF
Manufacturer Part Number
IRFBC40APBF
Description
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 1.2 Ohms; ID 6.2A; TO-220AB; PD 125W; VGS +/-30
Manufacturer
Vishay PCS
Datasheet
1.IRFBC40APBF.pdf
(3 pages)
Specifications of IRFBC40APBF
Current, Drain
6.2 A
Gate Charge, Total
42 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
1.2 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
31 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
3.4 S
Voltage, Breakdown, Drain To Source
600 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBC40APBF
Manufacturer:
M/A-COM
Quantity:
5 000
Part Number:
IRFBC40APBF
Manufacturer:
IR墨西哥
Quantity:
20 000
Notes:
Repetitive rating; pulse width limited by
I
R
max. junction temperature. ( See fig. 11 )
T
Starting T
SD
J
G
≤ 150°C
= 25Ω, I
≤ 6.2A, di/dt ≤ 80A/µs, V
J
AS
NOTES:
= 25°C, L =29.6mH
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
= 6.2A. (See Figure 12)
14.09 (.555)
13.47 (.530)
15.24 (.600)
14.84 (.584)
E XAMPL E :
2.87 (.113)
2.62 (.103)
3X
2.54 (.100)
1.40 (.055)
1.15 (.045)
2X
T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
10.54 (.415)
10.29 (.405)
DD
1
2
≤ V
3
4
(BR)DSS
3X
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
1.15 (.045)
4.06 (.160)
3.55 (.140)
MIN
,
3.78 (.149)
3.54 (.139)
M
- A -
B A M
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
as C
INT E R NAT IONAL
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
oss
R E CT IF IE R
AS S E MB L Y
L OT CODE
L OGO
oss
eff. is a fixed capacitance that gives the same charging time
4.69 (.185)
4.20 (.165)
while V
DS
- B -
is rising from 0 to 80% V
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
3X
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
PAR T NU MB E R
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
DSS
8