BAV23S,215 Philips Semiconductors, BAV23S,215 Datasheet

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BAV23S,215

Manufacturer Part Number
BAV23S,215
Description
DIODE SW TAPE-7
Manufacturer
Philips Semiconductors
Datasheet
1.BAV23S215.pdf (5 pages)

Specifications of BAV23S,215

Capacitance, Junction
2 pF
Configuration
Dual Series
Current, Forward
125 mA
Current, Reverse
100 μA
Current, Surge
1.7 A
Package Type
SOT-23
Power Dissipation
250 mW
Primary Type
Rectifier
Speed, Switching
High
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-65 to +150 °C
Time, Recovery
50 ns
Voltage, Forward
1.25 V
Voltage, Reverse
200 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Dual high-voltage switching diodes, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
[1]
I
I
I
I
I
Table 2.
[1]
Type number
BAV23A/DG
BAV23C/DG
BAV23S
BAV23S/DG
BAV23
BAV23/DG
Symbol
Per diode
I
V
t
R
rr
R
BAV23 series
Dual high-voltage switching diodes
High switching speed: t
Low leakage current
Repetitive peak reverse voltage:
V
High-speed switching at high voltage
High-voltage general-purpose switching
/DG: halogen free
When switched from I
RRM
Product overview
Quick reference data
250 V
Parameter
reverse current
reverse voltage
reverse recovery time
[1]
F
Package
NXP
SOT23
SOT23
SOT23
SOT143B
= 10 mA to I
rr
50 ns
R
= 10 mA; R
Conditions
V
R
= 200 V
L
= 100 ; measured at I
I
I
JEDEC
TO-236AB
TO-236AB
TO-236AB
-
Low capacitance: C
Small SMD plastic package
[1]
Min
-
-
-
R
= 1 mA.
Typ
-
-
-
Configuration
dual common anode
dual common cathode
dual series
dual isolated
d
2 pF
Max
100
200
50
Unit
nA
V
ns

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BAV23S,215 Summary of contents

Page 1

BAV23 series Dual high-voltage switching diodes 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Type number BAV23A/DG BAV23C/DG BAV23S BAV23S/DG BAV23 BAV23/DG [1] /DG: halogen free 1.2 Features ...

Page 2

NXP Semiconductors 2. Pinning information Table 3. Pin BAV23A/ BAV23C/ BAV23S; BAV23S/ BAV23; BAV23/ BAV23_SER_6 Product data sheet Pinning Description cathode (diode 1) cathode (diode 2) common ...

Page 3

NXP Semiconductors 3. Ordering information Table 4. Type number BAV23A/DG BAV23C/DG BAV23S BAV23S/DG BAV23 BAV23/DG 4. Marking Table 5. Type number BAV23A/DG BAV23C/DG BAV23S BAV23S/DG BAV23 BAV23/DG [ made in Hong Kong * = p: made in ...

Page 4

NXP Semiconductors Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device P tot amb T stg [1] Single diode loaded. [2] Double diode loaded. [ prior to ...

Page 5

NXP Semiconductors 9. Package outline 3.0 2.8 3 2.5 1.4 2.1 1.2 1 1.9 Dimensions in mm Fig 7. Package outline SOT23 (TO-236AB) 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering ...

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