BAV23S,215 Philips Semiconductors, BAV23S,215 Datasheet - Page 3
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BAV23S,215
Manufacturer Part Number
BAV23S,215
Description
DIODE SW TAPE-7
Manufacturer
Philips Semiconductors
Datasheet
1.BAV23S215.pdf
(5 pages)
Specifications of BAV23S,215
Capacitance, Junction
2 pF
Configuration
Dual Series
Current, Forward
125 mA
Current, Reverse
100 μA
Current, Surge
1.7 A
Package Type
SOT-23
Power Dissipation
250 mW
Primary Type
Rectifier
Speed, Switching
High
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-65 to +150 °C
Time, Recovery
50 ns
Voltage, Forward
1.25 V
Voltage, Reverse
200 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
BAV23_SER_6
Product data sheet
Table 4.
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Type number
BAV23A/DG
BAV23C/DG
BAV23S
BAV23S/DG
BAV23
BAV23/DG
Type number
BAV23A/DG
BAV23C/DG
BAV23S
BAV23S/DG
BAV23
BAV23/DG
Symbol
Per diode
V
V
I
I
I
F
FRM
FSM
RRM
R
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Ordering information
Marking codes
Limiting values
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
Package
Name
-
-
Description
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 4 leads
Conditions
square wave
t
t
t
p
p
p
= 1 s
= 100 s
= 10 ms
Marking code
ZY*
ZX*
*V5
YD*
L30
*N1
Dual high-voltage switching diodes
[1]
[1]
[2]
[3]
BAV23 series
Min
-
-
-
-
-
-
-
-
Max
250
200
225
125
625
9
3
1.7
Version
SOT23
SOT143B
Unit
V
V
mA
mA
mA
A
A
A
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