NTE2388 NTE Electronics, Inc., NTE2388 Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
NTE2388
Manufacturer Part Number
NTE2388
Description
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.18Ohm; ID 18A; TO-220; PD 125W; VGS +/-20V
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2388.pdf
(3 pages)
Specifications of NTE2388
Current, Drain
18 A
Gate Charge, Total
38 nC
Package Type
TO-220
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
0.18 Ohm
Resistance, Thermal, Junction To Case
1 °C⁄W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
80 ns
Time, Turn-on Delay
30 ns
Transconductance, Forward
6 mhos
Transistor Type
N Channel Enhancement Mode
Voltage, Breakdown, Drain To Source
200 V
Voltage, Forward, Diode
1.8 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrical Characteristics: (T
Note 1. Pulse test: Pulse width
OFF Characteristics
Drain–Source Breakdown Voltage
Zero–Gate Voltage Drain Current
Gate–Body Leakage Current, Forward
Gate–Body Leakage Current, Reverse
ON Characteristics (Note 1)
Gate Threshold Voltage
Static Drain–Source On Resistance
On–State Drain Current
Forward Transconductance
Dynamic Characteristics
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
Switching Characteristics (Note 1)
Turn–On Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Source Drain Diode Characteristics (Note 1)
Forward ON Voltage
Forward Turn–On Time
Reverse Recovery Time
Internal Package Inductance
Internal Drain Inductance
Internal Source Inductance
Parameter
C
= +25 C unless otherwise specified)
300 s, Duty cycle
V
Symbol
R
V
(BR)DSS
I
I
I
t
GSSR
C
t
I
GSSF
DS(on)
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
DSS
Q
g
t
L
L
t
on
oss
t
t
SD
rss
rr
iss
fs
gs
gd
r
f
d
s
g
I
V
V
T
V
V
V
V
V
V
V
f = 1MHz
V
V
I
I
Measured from the contact
screw on tab to center of die
Measured from the drain lead
0.25” from package to center
of die
Measured from the source
lead 0.25” from package to
source bond pad
D
R
D
S
C
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
DS
g
= Rated I
= 250 A, V
= Rated I
= +125 C
= 4.7
= 0, V
= 0, V
= V
= 25V, V
= 160V, V
= 0, V
= 0, V
= 10V, I
= 10V, V
[ 75V, I
Test Conditions
3.2V, I
GS
GSF
GSR
DS
DS
, I
2%.
D
D
D
D
D
, V
GS
DS
D
= Max Rating
= 160V,
GS
= 10A
GS
= 250 A
= 10A
= 20V
= 20V
= 10A
GS
= 0,
= 0
= 10V,
3.2V
= 0
PEAK
,
Limited by stray inductance
Min
200
18
–
–
–
–
2
–
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
450
1.8
3.5
4.5
7.5
38
16
22
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1000
1600
Max
0.18
200
100
100
750
300
2.0
30
60
80
60
60
–
4
–
–
–
–
–
–
–
–
mhos
Unit
nC
nC
nC
nH
nH
nH
nA
nA
ns
ns
ns
ns
ns
pf
pf
pf
V
V
A
V
A
A