NTE2331 NTE Electronics, Inc., NTE2331 Datasheet
NTE2331
Manufacturer Part Number
NTE2331
Description
Transistor, Bipolar; TO-3PML; T-NPN; 800V; 1500V; 6V; 6A; 60W; 150degC; 1500V; 5V
Manufacturer
NTE Electronics, Inc.
Type
High Voltager
Datasheet
1.NTE2331.pdf
(2 pages)
Specifications of NTE2331
Current, Collector
6 A
Current, Gain
5 to 10
Device Dissipation
60 W (Collector)
Gain, Dc Current, Maximum
10 @ VCE == 5V, IC == 5A
Gain, Dc Current, Minimum
5 @ VCE == 5V, IC == 5A
Package Type
TO-3PML
Polarity
NPN
Power Dissipation
60 W
Primary Type
Si
Temperature Range, Junction, Operating
150 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Base
1500 V (Max.)
Voltage, Breakdown, Collector To Emitter
800 V
Voltage, Collector To Base
1500 V
Voltage, Collector To Emitter
800 V
Voltage, Collector To Emitter, Saturation
5 V
Voltage, Emitter To Base
6 V
Voltage, Saturation, Collector To Emitter
5 V (Max.)
Lead Free Status / Rohs Status
RoHS Compliant part
Applications:
D Color TV Horizontal Deflection Output
D Color Display Horizontal Deflection Output
Features:
D High Speed (t
D High Breakdown Voltage (V
D High Reliability
D On–Chip Damper Diode
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Saturation Voltage
Saturation Voltage
Collector to Emitter
Base to Emitter
Continous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100nsec)
C
Color TV Horizontal Deflection Output
C
EBO
= +25 C), P
CBO
CEO
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
CEO(sus)
CE(sat)
CBO
stg
I
I
BE(sat)
A
I
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CES
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
A
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1500V)
= +25 C unless otherwise specified)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
w
/Damper Diode
V
V
I
V
I
I
C
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
CB
EB
= 100mA, I
= 5A, I
= 5A, I
NTE2331
= 4V
= 1500V
= 800V
Test Conditions
B
B
= 1.0A
= 1.0A
B
= 0
Min
800
40
–
–
–
–
Typ
–
–
–
–
–
–
–55 to +150 C
Max Unit
130
1.0
1.5
10
–
5
+150 C
1500V
mA
mA
800V
60W
V
V
V
20A
A
6V
6A
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NTE2331 Summary of contents
Page 1
... Operating Junction Temperature, T Storage Temperature Range, T Electrical Characteristics: (T Parameter Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Saturation Voltage Collector to Emitter Saturation Voltage Base to Emitter NTE2331 Silicon NPN Transistor w /Damper Diode = 1500V) CBO = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter DC Current Gain Diode Forward Voltage Fall Time .123 (3.1) = +25 C unless otherwise specified) A Symbol Test Conditions 5V FE1 5V, I ...