SI3552DV-T1-E3 Siliconix / Vishay, SI3552DV-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI3552DV-T1-E3
• Description: MOSFET, Dual, Complementary, 30V, 2.5/1.8A, TSOP-6
• Manufacturer: Siliconix / Vishay

Specifications of SI3552DV-T1-E3

• Lead Free Status / Rohs Status: RoHS Compliant part

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4
Si3552DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.1
0.01
10
0.1
1
- 50
0.00
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
T
Threshold Voltage
I
= 150_C
D
J
0.4
10
= 250 mA
- Temperature (_C)
25
-3
Single Pulse
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10
100
-2
T
J
= 25_C
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
-1
1
0.40
0.32
0.24
0.16
0.08
0.00
8
6
4
2
0
0.01
0
Single Pulse Power (Junction-to-Ambient)
On-Resistance vs. Gate-to-Source Voltage
I
D
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
= 2 A
V
Notes:
2
P
GS
DM
JM
0.1
- Gate-to-Source Voltage (V)
- T
A
t
1
= P
Time (sec)
t
4
2
DM
I
D
Z
= 2.5 A
thJA
thJA
100
t
t
(t)
1
2
S-31725—Rev. B, 18-Aug-03
= 130_C/W
1
Document Number: 70971
6
NCHANNEL
600
8
10
10
30