NTE272 NTE Electronics, Inc., NTE272 Datasheet
NTE272
Manufacturer Part Number
NTE272
Description
Transistor, NPN; TO202; PNP Bipolar; 40 V (Max.); 50 V (Max.); 12 V (Max.)
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Powerr
Datasheet
1.NTE272.pdf
(2 pages)
Specifications of NTE272
Current, Collector
2 A (Max.)
Current, Collector Cutoff
100 nA (Max.) @ 30 V
Current, Gain
12000
Current, Output
2 A
Package Type
TO-202
Polarity
NPN
Power Dissipation
1 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
125
Resistance, Thermal, Junction To Case
12.5 °C⁄W (Max.)
Temperature Range, Junction, Operating
-55 to +150 °C
Thermal Resistance, Junction To Ambient
125 °C⁄W (Max.)
Transistor Polarity
PNP Bipolar
Voltage, Collector To Base
50 V (Max.)
Voltage, Collector To Emitter
40 V (Max.)
Voltage, Collector To Emitter, Saturation
1.2 V
Voltage, Emitter To Base
12 V (Max.)
Voltage, Input
12 V
Voltage, Output
40 V
Voltage, Saturation, Collector To Emitter
1.2 V (Typ.) @ 1 A
Description:
The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type
case designed for use in complementary amplifiers and driver applications.
Features:
D High DC Current Gain:
D Collector−Emitter Breakdown Voltage:
D Low Collector−Emitter Saturation Voltage:
D Monolithic Construction for High Reliability
Absolute Maximum Ratings:
Collector−Emitter Voltage (Note 2), V
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Ambient, R
Thermal Resistance, Junction−to−Case, R
Note 1. NTE273 is a discontinued device and no longer available.
Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor ele-
Derate above 25°C
Derate above 25°C
ments are identical. V
by noise pickup. The voltage measured during the V
transistor.
h
V
V
FE
(BR)CES
CE(sat)
= 25,000 (Min) @ I
= 15,000 (Min) @ I
= 1.5V @ I
C
= 40V @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Darlington Complementary
EB
A
CB
C
NTE272 (NPN) & NTE273 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), P
CES
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
= 1A
(BR)CES
= 500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 200mA
= 500mA
Power Amplifiers
CEO
is tested in lieu of V
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CEO
(BR)CES
in order to avoid errors caused
test is the V
(BR)CEO
−55 to +150°C
−55 to +150°C
of the output
80mW/°C
12.5°C/W
125°C/W
8mW/°C
10W
40V
40V
50V
12V
1W
2A
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NTE272 Summary of contents
Page 1
... NTE272 (NPN) & NTE273 (PNP) Silicon Darlington Complementary Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: D High DC Current Gain 25,000 (Min 15,000 (Min Collector−Emitter Breakdown Voltage: ...
Page 2
... Base−Emitter Saturation Voltage Base−Emitter ON Voltage Dynamic Characteristics Small−Signal Current Gain Collector−Base Capacitance Note 3. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%. NTE272 Schematic B NTE273 Schematic B Uniwatt darlington transistors can be used in any number of low power applications, such as relay drivers, motor control and as general purpose amplifiers ...