SK 30GD123 Sindopower / Semikron, SK 30GD123 Datasheet
SK 30GD123
Manufacturer Part Number
SK 30GD123
Description
SIX PACK IGBT MODULE, 1200V, SEMITOP3
Manufacturer
Sindopower / Semikron
Type
Standardr
Datasheet
1.SK_30GD123.pdf
(3 pages)
Specifications of SK 30GD123
Capacitance, Gate
1.65 nF
Current, Collector
33 A
Energy Rating
6 mJ
Package Type
T12
Polarity
N-Channel
Primary Type
Si
Transistor Type
IGBT
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
2.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
SK30GD123
IGBT Module
SK30GD123
Preliminary Data
Features
Typical Applications
1
SEMITOP
GD
®
3
Absolute Maximum Ratings
Symbol
IGBT
Inverse Diode
Module
Characteristics
Symbol
IGBT
30-10-2006 DIL
Conditions
Conditions
min.
Values
typ.
© by SEMIKRON
max.
Units
Units
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SK 30GD123 Summary of contents
Page 1
SK30GD123 ® SEMITOP 3 IGBT Module SK30GD123 Preliminary Data Features Typical Applications GD 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Module Characteristics Symbol Conditions IGBT 30-10-2006 DIL Values Units min. typ. max. Units © by SEMIKRON ...
Page 2
SK30GD123 ® SEMITOP 3 IGBT Module SK30GD123 Preliminary Data Features Typical Applications GD 2 Characteristics Symbol Conditions Inverse Diode This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but ...
Page 3
SK30GD123 UL recognized file 5 30-10-2006 DIL no 532 © by SEMIKRON ...