SK 30GD123 Sindopower / Semikron, SK 30GD123 Datasheet - Page 2

• Manufacturer Part Number: SK 30GD123
• Description: SIX PACK IGBT MODULE, 1200V, SEMITOP3
• Manufacturer: Sindopower / Semikron
• Type: Standardr

Specifications of SK 30GD123

• Capacitance, Gate: 1.65 nF
• Current, Collector: 33 A
• Energy Rating: 6 mJ
• Package Type: T12
• Polarity: N-Channel
• Primary Type: Si
• Transistor Type: IGBT
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 2.5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SK30GD123
IGBT Module
SK30GD123
Preliminary Data
Features
Typical Applications
2
SEMITOP
GD
®
3
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Characteristics
Symbol
Inverse Diode
30-10-2006 DIL
Conditions
min.
typ.
© by SEMIKRON
max.
Units