SI9933BDY-T1-E3 Siliconix / Vishay, SI9933BDY-T1-E3 Datasheet

no-image

SI9933BDY-T1-E3

Manufacturer Part Number
SI9933BDY-T1-E3
Description
MOSFET, Power; Dual P-Channel; -20 V; 12 V; 3.4 A; 2 W; -55 to 150 degC
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SI9933BDY-T1-E3

Channel Type
P
Current, Drain
–4.7 A
Fall Time
40 ns
Gate Charge, Total
9 nC
Operating And Storage Temperature
–55 to +150 °C
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
1.1 W
Resistance, Drain To Source On
0.06 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
–55 °C
Thermal Resistance, Junction To Ambient
62.5 °C/W
Time, Rise
55 ns
Time, Turn-off Delay
70 ns
Time, Turn-on Delay
35 ns
Transconductance, Forward
11 S
Voltage, Breakdown, Drain To Source
-20 V
Voltage, Drain To Source
–20 V
Voltage, Forward, Diode
–1.2 V
Voltage, Gate To Source
±12 V
Lead Free Status / Rohs Status
RoHS Compliant part

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9933BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
37 655
Part Number:
SI9933BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SI9933BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72748
S-40237—Rev. A, 16-Feb-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
Ordering Information: Si9933BDY—E3 (Lead Free)
i
DS
−20
−20
(V)
J
ti
G
G
S
S
t A bi
1
1
2
2
1
2
3
4
Si9933BDY-T1—E3 (Lead Free with Tape and Reel)
0.10 @ V
J
J
a
a
0.06 @ V
= 150_C)
= 150_C)
t
a
a
r
Top View
Parameter
Parameter
DS(on)
SO-8
Dual P-Channel 2.5-V (G-S) MOSFET
GS
GS
a
a
= −2.5 V
= −4.5 V
(W)
a
8
7
6
5
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
−4.7
−3.7
= 25_C
= 70_C
= 25_C
= 70_C
(A)
G
1
Symbol
Symbol
T
R
R
R
P-Channel MOSFET
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
D
S
1
1
10 secs
Typical
−4.7
−3.8
−1.7
2.0
1.3
55
90
33
−55 to 150
"12
−20
−20
G
2
Steady State
Maximum
P-Channel MOSFET
Vishay Siliconix
−3.6
−2.8
−0.9
62.5
1.1
0.7
110
40
Si9933BDY
S
D
2
2
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

Related parts for SI9933BDY-T1-E3

SI9933BDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si9933BDY—E3 (Lead Free) Si9933BDY-T1—E3 (Lead Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction) ...

Page 2

... Si9933BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... S-40237—Rev. A, 16-Feb-04 New Product 1000 800 600 400 200 16 20 1.6 1.4 1.2 1.0 0.8 0 0.20 0.16 0.12 0. 25_C J 0.04 0.00 1.0 1.2 1.4 Si9933BDY Vishay Siliconix Capacitance C iss C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 4 −50 − 100 T − ...

Page 4

... Si9933BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 −3 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72748 S-40237—Rev. A, 16-Feb-04 New Product −2 − Square Wave Pulse Duration (sec) Si9933BDY Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

Related keywords