MBRB10H100CT-E3/31 General Semiconductor / Vishay, MBRB10H100CT-E3/31 Datasheet
MBRB10H100CT-E3/31
Manufacturer Part Number
MBRB10H100CT-E3/31
Description
Rectifier; TO-263AB; 0.85 V; 10000
Manufacturer
General Semiconductor / Vishay
Datasheet
1.MBRB10H100CT-E331.pdf
(3 pages)
Specifications of MBRB10H100CT-E3/31
Configuration
Dual Common Cathode
Current, Forward
10 A
Current, Reverse
4.5 mA
Current, Surge
150 A
Package Type
TO-263AB
Primary Type
Schottky Barrier
Resistance, Thermal, Junction To Case
2.2 °C/W
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-65 to +175 °C
Voltage, Forward
0.61 V
Voltage, Reverse
100 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse current per diode at t
Voltage rate of change (rated V
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
MBR10H90CT
MBR10H100CT
PIN 1
PIN 3
TO-220AB
Dual Common-Cathode High-Voltage Schottky Rectifier
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
I
R
F
High Barrier Technology for Improved High Temperature Performance
PIN 2
CASE
1
K
MBRB10H90CT
MBRB10H100CT
PIN 2
PIN 1
TO-263AB
2
3
R
)
C
1
= 25 °C unless otherwise noted)
HEATSINK
2
K
MBRF10H90CT
MBRF10H100CT
PIN 1
PIN 3
90 V, 100 V
ITO-220AB
p
5 A x 2
175 °C
0.61 V
3.5 µA
150 A
= 2 µs, 1 kHz
C
= 105 °C
MBR(F,B)10H90CT & MBR(F,B)10H100CT
PIN 2
1
2
3
total device
per diode
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder Dip 260 °C, 40 s (for TO-220AB and
• Component in accordance to RoHS 2002/95/EC
SYMBOL
peak of 245 °C (for TO-263AB package)
ITO-220AB package)
and WEEE 2002/96/EC
T
V
J
V
dV/dt
I
I
I
V
F(AV)
, T
V
RRM
RWM
FSM
RRM
DC
AC
STG
supplies,
Vishay General Semiconductor
MBR10H90CT
90
90
90
freewheeling
- 65 to + 175
10 000
1500
150
5.0
0.5
10
MBR10H100CT
100
100
100
diodes,
dc-to-dc
UNIT
V/µs
°C
V
V
V
A
A
A
V
1
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MBRB10H100CT-E3/31 Summary of contents
Page 1
... Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB 3 2 MBR10H90CT 1 MBRF10H90CT MBR10H100CT MBRF10H100CT PIN 1 PIN 2 PIN 1 CASE PIN 3 PIN 3 TO-263AB MBRB10H90CT MBRB10H100CT PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS I F(AV) V RRM I FSM max. J MAXIMUM RATINGS ( °C unless otherwise noted) ...
Page 2
... Typical thermal resistance per diode , ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB MBR10H100CT-E3/45 ITO-220AB MBRF10H100CT-E3/45 TO-263AB MBRB10H100CT-E3/45 TO-263AB MBRB10H100CT-E3/81 TO-220AB MBR10H100CTHE3/45 ITO-220AB MBRF10H100CTHE3/45 TO-263AB MBRB10H100CTHE3/45 TO-263AB MBRB10H100CTHE3/81 Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted 100 125 Case Temperature (° ...
Page 3
MBR(F,B)10H90CT & MBR(F,B)10H100CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89) 1 ...