SI4431BDY-T1-E3/BKN Siliconix / Vishay, SI4431BDY-T1-E3/BKN Datasheet - Page 2

• Manufacturer Part Number: SI4431BDY-T1-E3/BKN
• Description: P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI4431BDY-T1-E3/BKN

• Channel Type: P
• Current, Drain: –5.8 A
• Fall Time: 70 ns
• Gate Charge, Total: 20 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 1.5 W
• Resistance, Drain To Source On: 0.05 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 50 °C/W
• Time, Rise: 20 ns
• Time, Turn-off Delay: 110 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 18 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: –30 V
• Voltage, Forward, Diode: –1.1 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Si4431BDY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Time
b
30
24
18
12
6
0
0
1
a
V
a
DS
V
Output Characteristics
GS
a
- Drain-to-Source Voltage (V)
J
= 10 thru 5 V
= 25 °C, unless otherwise noted
2
a
Symbol
R
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
3
DSS
g
Q
t
t
SD
t
rr
fs
gs
gd
r
f
g
4 V
4
V
V
I
DS
D
DS
3 V
≅ - 1 A, V
I
= - 15 V, V
F
= - 30 V, V
V
V
V
V
V
V
V
V
V
= - 2.1 A, dI/dt = 100 A/µs
DS
GS
I
DS
DS
GS
DS
DS
S
DD
5
DS
= - 2.1 A, V
Test Conditions
= - 5 V, V
= - 4.5 V, I
= V
= - 5 V, V
= - 10 V, I
= - 15 V, I
= 0 V, V
= - 30 V, V
= - 15 V, R
GEN
GS
GS
GS
, I
= - 10 V, R
= - 5 V, I
D
GS
= 0 V, T
GS
GS
D
= - 250 µA
D
D
GS
GS
= ± 20 V
L
= - 7.5 A
= - 7.5 A
= - 5.8 A
= - 4.5 V
= - 10 V
= 15 Ω
= 0 V
= 0 V
D
J
G
= 70 °C
= - 7.5 A
= 6 Ω
30
24
18
12
6
0
0.0
0.5
Min.
- 1.0
- 30
1.0
V
- 7
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
1.5
25 °C
T
C
0.023
0.036
- 0.78
2.0
Typ.
3.6
= 125 °C
18
13
10
10
70
47
45
6
S09-0131-Rev. C, 02-Feb-09
Document Number: 72092
2.5
3.0
± 100
0.030
0.050
Max.
- 3.0
- 1.1
- 10
110
- 55 °C
- 1
20
20
20
70
80
3.5
4.0
Unit
nC
nA
µA
ns
Ω
V
A
S
V
4.5