IRFR120N International Rectifier, IRFR120N Datasheet - Page 2
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IRFR120N
Manufacturer Part Number
IRFR120N
Description
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.21Ohm; ID 9.4A; D-Pak (TO-252AA); PD 48W
Manufacturer
International Rectifier
Datasheet
1.IRFR120N.pdf
(4 pages)
Specifications of IRFR120N
Application
Fast switching speed and ruggedized device design that for provides the designer with an extremely efficient device
Channel Type
N-Channel
Current, Drain
9.4 A
Fall Time
23 ns (Typ.)
Gate Charge, Total
25 nC
Mounting And Package Type
Surface Mount and TO-252AA
Operating And Storage Temperature
-55 to +175 °C
Package Type
D-Pak (TO-252AA)
Polarization
N-Channel
Power Dissipation
48 W
Resistance, Drain To Source On
0.21 Ohm
Resistance, Thermal, Junction To Case
3.1 °C⁄W (Max.)
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
110 °C⁄W
Time, Rise
23 ns (Typ.)
Time, Turn-off Delay
32 ns
Time, Turn-on Delay
4.5 ns
Transconductance, Forward
2.7 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Diode Forward
1.3 V (Max.)
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR120N
Manufacturer:
IR
Quantity:
15 052
Part Number:
IRFR120NPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IRFR120NTRPBF
Manufacturer:
IR
Quantity:
2 000
Part Number:
IRFR120NTRPBF
Manufacturer:
IR
Quantity:
20 000
Electrical Characteristics @ T
IRFR/U120N
Source-Drain Ratings and Characteristics
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
L
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
I
I
V
t
Q
t
GSS
d(on)
r
d(off)
f
D
SM
S
rr
on
V
fs
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
g
gs
gd
SD
2
V
rr
Repetitive rating; pulse width limited by
(BR)DSS
R
I
max. junction temperature. ( See fig. 11 )
T
SD
DD
For recommended footprint and soldering techniques refer to application note #AN-994
G
J
= 25 , I
= 25V, starting T
175°C
5.7A, di/dt
/ T
J
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 5.7A. (See Figure 12)
240A/µs, V
J
= 25°C, L = 4.7mH
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Pulse width
Uses IRF520N data and test conditions
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
2.7
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
Typ. Max. Units
0.12 –––
–––
––– 0.21
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
330
4.5
7.5
4.5
–––
–––
–––
390
23
32
23
92
54
99
300µs; duty cycle
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
4.0
4.8
150
580
–––
25
25
11
1.3
9.4
38
V/°C Reference to 25°C, I
µA
nA
nC
nH
pF
ns
nC
V
V
S
ns
A
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
MOSFET symbol
integral reverse
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
J
J
2%
= 5.7A
= 5.7A
= 25°C, I
= 25°C, I
= 22
= 8.6
= V
= 25V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 50V
= 0V
GS
Conditions
, I
D
See Fig. 10
D
S
F
D
D
= 250µA
Conditions
GS
= 5.7A
= 5.5A, V
= 250µA
= 5.7A
= 5.6A
GS
= 0V, T
= 0V
D
= 1mA
GS
J
= 150°C
G
= 0V
G
S
+L
D
D
S
)
S
D