IRFR120N International Rectifier, IRFR120N Datasheet - Page 4

• Manufacturer Part Number: IRFR120N
• Description: MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.21Ohm; ID 9.4A; D-Pak (TO-252AA); PD 48W
• Manufacturer: International Rectifier

Specifications of IRFR120N

• Application: Fast switching speed and ruggedized device design that for provides the designer with an extremely efficient device
• Channel Type: N-Channel
• Current, Drain: 9.4 A
• Fall Time: 23 ns (Typ.)
• Gate Charge, Total: 25 nC
• Mounting And Package Type: Surface Mount and TO-252AA
• Operating And Storage Temperature: -55 to +175 °C
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 48 W
• Resistance, Drain To Source On: 0.21 Ohm
• Resistance, Thermal, Junction To Case: 3.1 °C⁄W (Max.)
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 110 °C⁄W
• Time, Rise: 23 ns (Typ.)
• Time, Turn-off Delay: 32 ns
• Time, Turn-on Delay: 4.5 ns
• Transconductance, Forward: 2.7 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Diode Forward: 1.3 V (Max.)
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V

IRFR/U120N
Tape & Reel Information
TO-252AA
10
N O T E S :
1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R .
2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ).
3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.
12 .1 ( .4 76 )
11 .9 ( .4 69 )
N O T E S :
1. O U T LIN E C O N F O R M S T O E IA -481 .
13 IN C H
T R
F E E D D IR E C T IO N
1 6.3 ( .641 )
1 5.7 ( .619 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
T R R
16 m m
T R L
F E E D D IR E C T IO N
16.3 ( .64 1 )
15.7 ( .61 9 )