NTE383 NTE Electronics, Inc., NTE383 Datasheet - Page 2

• Manufacturer Part Number: NTE383
• Description: Transistor; PNP; 120 V (Max.); 120 V (Max.); 100 V (Max.); 1 A (Max.); 160; NPN
• Manufacturer: NTE Electronics, Inc.
• Type: Driverr

Specifications of NTE383

• Complement To: NPN
• Current, Collector: 1 A
• Current, Collector Cutoff: 10 uA (Max.)
• Current, Continuous Collector: 1 A (Max.)
• Current, Gain: 320
• Frequency: 140 MHz
• Gain, Dc Current, Minimum: 160
• Material Type: Silicon
• Package Type: R-245
• Polarity: PNP
• Power Dissipation: 900 mW
• Primary Type: Si
• Temperature Range, Junction, Operating: 150°C (Max.)
• Transistor Polarity: PNP
• Voltage, Base To Emitter: 1.5 V (Max.)
• Voltage, Breakdown, Collector To Base: 120 V (Min.)
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Breakdown, Emitter To Base: 5 V (Min.)
• Voltage, Collector To Base: 120 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 5 V
• Voltage, Saturation, Collector To Emitter: 1.0 V (Max.)
• Lead Free Status / Rohs Status: RoHS Compliant part

.102 (2.6) Max
.236 (6.0)Dia Max
.118 (3.0) Max
.102 (2.6) Max
.018 (0.48)
(8.73)
(12.5)
.343
.492
Max
Min
E C B
.024 (0.62) Max
.059 (1.5) Typ
(5.0)
.197
.102 (2.6) Max
.102 (2.6) Max