NTE375 NTE Electronics, Inc., NTE375 Datasheet
NTE375
Manufacturer Part Number
NTE375
Description
Transistor; TO220; NPN; 150; 200; 6 V; 2 A; 1.75 W; 150 degC; 1.0 mA (Max.); 10
Manufacturer
NTE Electronics, Inc.
Type
Vertical Outputr
Datasheet
1.NTE375.pdf
(2 pages)
Specifications of NTE375
Current, Collector
2 A
Current, Collector Cutoff
1 mA
Current, Continuous Collector
2 A
Current, Gain
100 to 200
Device Dissipation
1.75 W
Frequency
8 MHz
Gain, Dc Current, Maximum
200
Gain, Dc Current, Minimum
100
Package Type
TO-220
Polarity
NPN
Power Dissipation
1.75 W
Primary Type
Si
Temperature Range, Junction, Operating
150 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
150 V
Voltage, Collector To Base
200 V
Voltage, Collector To Emitter
150 V
Voltage, Collector To Emitter, Saturation
1.5 V
Voltage, Emitter To Base
6 V
Lead Free Status / Rohs Status
RoHS Compliant part
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation (T
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
C
EBO
= +25 C), P
= +25 C), P
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25 C unless otherwise specified)
A
Symbol
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25 C unless otherwise specified)
(Compl to NTE398)
TV Vertical Output
I
I
CE(sat)
BE(sat)
h
CBO
EBO
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
FE
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
I
I
NTE375
C
C
CB
EB
CE
CE
= 1A, I
= 1A, I
= 5V, I
= 180V, I
= 2V, I
= 5V, I
Test Conditions
B
B
C
C
C
= 100mA
= 100mA
= 0
= 500mA
= 500mA
E
= 0
Min
100
–
–
–
–
–
Typ
–
–
–
8
–
–
–40 to +150 C
Max Unit
200
1.0
5.0
1.5
1.8
–
+150 C
1.75W
MHz
200V
150V
mA
mA
25W
V
V
10A
6V
2A
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NTE375 Summary of contents
Page 1
... Storage Temperature Range, T Electrical Characteristics: (T Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector–Emitter Saturation Voltage V Base–Emitter Saturation Voltage NTE375 Silicon NPN Transistor TV Vertical Output (Compl to NTE398) = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Dia Max .070 (1.78) Max Base .100 (2.54) .420 (10.67) Max .250 (6.35) Max Emitter Collector/Tab .110 (2.79) .500 (12.7) Max .500 (12.7) Min ...