74HCT04D,652 Philips Semiconductors, 74HCT04D,652 Datasheet - Page 6

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74HCT04D,652

Manufacturer Part Number
74HCT04D,652
Description
LOGIC; SO-14; CMOS LOGIC; 5 V (TYP.); 500 MW (MAX.); -40; +125; 2 UA (MAX.) ICC
Manufacturer
Philips Semiconductors
Datasheet

Specifications of 74HCT04D,652

Capacitance, Input
3.5 pF
Circuit Type
High Speed, Low-Power Schottky, Silicon Gate
Current, Input, Leakage
±1.0 μA (Max.)
Current, Supply
40 μA
Function Type
1-Input
Logic Function
Inverter
Logic Type
CMOS/TTL
Number Of Circuits
Hex
Package Type
SO-14
Power Dissipation
500 mW (Max.)
Special Features
Tri-State
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-40 °C
Temperature, Operating, Range
-40 to +125 °C
Time, Delay, Propagation (high-to-low Level Output)
8 ns (Typ.)
Time, Delay, Propagation (low-to-high Level Output)
8 ns (Typ.)
Voltage, Input, High Level
1.6 V (Typ.)
Voltage, Input, Low Level
1.2 V (Typ.)
Voltage, Supply
5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Philips Semiconductors
Family 74HCT04
GND = 0 V; t
AC WAVEFORMS
T
t
t
T
t
t
T
t
t
PHL
THL
PHL
THL
PHL
THL
amb
amb
amb
Hex inverter
SYMBOL
For 74HC04: V
For 74HCT04: V
Fig.6
/t
/t
/t
/t
/t
/t
TLH
TLH
TLH
PLH
PLH
PLH
= 25 C
= 40 to +85 C
= 40 to +125 C
Waveforms showing the data input (nA) to data output (nY) propagation delays and the output transition
times.
r
= t
M
M
= 50%; V
f
propagation delay
nA to nY
output transition time
propagation delay
nA to nY
output transition time
propagation delay
nA to nY
output transition time
= 1.3 V; V
6.0 ns; C
PARAMETER
I
= GND to V
I
= GND to 3.0 V.
L
= 50 pF.
handbook, halfpage
CC
.
nY output
nA input
GND
V OH
V OL
V I
see Figs 6 and 7
see Figs 6 and 7
see Figs 6 and 7
see Figs 6 and 7
see Figs 6 and 7
see Figs 6 and 7
WAVEFORMS
TEST CONDITIONS
V M
t THL
V M
t PHL
12
4.5
4.5
4.5
4.5
4.5
4.5
V
10%
CC
V M
V M
t TLH
(V)
90%
t PLH
MNA722
MIN.
74HC04; 74HCT04
10
7
TYP.
Product specification
19
15
24
19
29
22
MAX.
ns
ns
ns
ns
ns
ns
UNIT

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