SI6544BDQ-T1-E3 Siliconix / Vishay, SI6544BDQ-T1-E3 Datasheet
SI6544BDQ-T1-E3
Specifications of SI6544BDQ-T1-E3
Available stocks
Related parts for SI6544BDQ-T1-E3
SI6544BDQ-T1-E3 Summary of contents
Page 1
... TSSOP Top View Ordering Information: Si6544BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...
Page 2
... Si6544BDQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
Page 3
... Drain Current (A) D On-Resistance vs. Drain Current 4 Total Gate Charge (nC) g Gate Charge Document Number: 72244 S-81056-Rev. B, 12-May- Si6544BDQ Vishay Siliconix 125 ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 1100 880 C iss 660 440 C 220 oss C rss ...
Page 4
... Si6544BDQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 250 µA D 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1.5 75 100 125 150 ...
Page 5
... Single Pulse 0. Document Number: 72244 S-81056-Rev. B, 12-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si6544BDQ Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W thJA ( ...
Page 6
... Si6544BDQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.15 0. 0.06 0.03 0. Drain Current (A) D On-Resistance vs. Drain Current 3 0.0 3.2 6 Total Gate Charge (nC) g Gate Charge www.vishay.com 9.6 12.8 16 125 ° ° ° ...
Page 7
... J 0.9 1.2 1.5 75 100 125 150 100 Limited DS(on 0 °C C Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Case Si6544BDQ Vishay Siliconix 0.20 0. 3.8 A 0.12 D 0.08 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 200 160 120 Time (s) ...
Page 8
... Si6544BDQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
Page 9
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...