2N7002K-T1-E3 Siliconix / Vishay, 2N7002K-T1-E3 Datasheet
2N7002K-T1-E3
Manufacturer Part Number
2N7002K-T1-E3
Description
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 2 Ohms; ID 300mA; TO-236 (SOT-23); PD 0.35W
Manufacturer
Siliconix / Vishay
Datasheet
1.2N7002K-T1-E3.pdf
(2 pages)
Specifications of 2N7002K-T1-E3
Channel Type
N
Current, Drain
300 mA
Gate Charge, Total
0.4 nC
Operating And Storage Temperature
–55 to +150 °C
Package Type
TO-236 (SOT-23)
Polarization
N-Channel
Power Dissipation
0.35 W
Resistance, Drain To Source On
2 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
–55 °C
Time, Turn-off Delay
35 ns
Time, Turn-on Delay
25 ns
Transconductance, Forward
100 mS
Voltage, Breakdown, Drain To Source
60 V
Voltage, Diode Forward
1.3 V
Voltage, Drain To Source
60 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
⢠Low On-resistance
2 Ω
⢠Low Threshold
2 V (Typ.)
⢠Low Input Capacitance
25 pF
⢠Fast Switching Speed
25 ns
Direct Logic-level Interface
TTL/CMOS
Drivers
Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N7002K-T1-E3
Manufacturer:
SIX
Quantity:
177 000
Company:
Part Number:
2N7002K-T1-E3
Manufacturer:
RENESAS
Quantity:
69
Part Number:
2N7002K-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Ordering Information: 2N7002K-T1
V
DS
G
60
S
(V)
1
2
* Marking Code
2N7002K (7K)*
Top View
T O-236
SOT -23
b
a
2N7002K-T1-E3 (Lead (Pb)-free)
2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free)
2 at V
R
DS(on)
J
GS
= 150 °C)
3
b
= 10 V
(Ω)
D
N-Channel 60-V (D-S) MOSFET
b
I
D
A
300
(mA)
= 25 °C, unless otherwise noted
T
T
T
T
FEATURES
BENEFITS
APPLICATIONS
A
A
A
A
• Halogen-free According to IEC 61249-2-21
•
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET
•
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
• Battery Operated Systems
• Solid-State Relays
= 100 °C
= 100 °C
= 25 °C
= 25 °C
Available
Low On-Resistance: 2 Ω
2000 V ESD Protection
Memories, Transistors, etc.
®
Symbol
T
Power MOSFET
R
V
V
J,
I
P
DM
I
thJA
DS
GS
D
T
D
stg
- 55 to 150
Limit
± 20
0.35
0.14
300
190
800
350
60
Vishay Siliconix
2N7002K
°C/W
Unit
mA
°C
W
V
1
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2N7002K-T1-E3 Summary of contents
Page 1
... O-236 SOT - Top View 2N7002K (7K)* * Marking Code Ordering Information: 2N7002K-T1 2N7002K-T1-E3 (Lead (Pb)-free) 2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 150 ° Pulsed Drain Current b Power Dissipation b Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes: a ...
Page 2
... Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage a Dynamic Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance ...