NTE2508 NTE Electronics, Inc., NTE2508 Datasheet
NTE2508
Manufacturer Part Number
NTE2508
Description
Transistor, Bipolar; TO-126ML; T-NPN; 120V; 120V; 3V; 300mA; 1.3W; 150degC; 120V; 1V
Manufacturer
NTE Electronics, Inc.
Type
High Voltager
Datasheet
1.NTE2508.pdf
(2 pages)
Specifications of NTE2508
Current, Collector
300 mA
Current, Gain
40 to 320
Device Dissipation
1.3 W (Collector)
Frequency
400 MHz
Gain, Dc Current, Maximum
40 (Min.)
Gain, Dc Current, Minimum
20
Package Type
TO-126ML
Polarity
NPN
Power Dissipation
1.3 W
Primary Type
Si
Temperature Range, Junction, Operating
150 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
120 V
Voltage, Collector To Base
120 V
Voltage, Collector To Emitter
120 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
3 V
Voltage, Saturation, Collector To Emitter
1 V (Max.)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTE2508
Manufacturer:
IR
Quantity:
21 600
Features:
D High Gain Bandwidth Product: f
D High Breakdown Voltage: V
D Low Reverse Transfer Capacitance and Excellent HF Response
Applications:
D High–Definition CRT Display Video Output
D Wide–Band Amp
Absolute Maximum Ratings: (T
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Continuous
Peak
T
T
A
C
= +25 C
= +25 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Silicon Complementary Transistors
NTE2508 (NPN) & NTE2509 (PNP)
EBO
CBO
CEO
stg
A
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Video Output for HDTV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25 C unless otherwise specified)
= 120V Min
= 500MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
I
I
h
CBO
EBO
f
FE
T
V
V
V
V
V
CB
EB
CE
CE
CE
= 2V, I
= 80V, I
= 10V, I
= 10V, I
= 10V, I
Test Conditions
C
E
C
C
C
= 0
= 0
= 50mA
= 200mA
= 50mA
Min
40
20
–
–
–
Typ
400
–
–
–
–
–55 to +150 C
Max Unit
320
0.1
0.1
–
–
+150 C
300mA
600mA
MHz
120V
120V
1.3W
A
A
8W
3V
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NTE2508 Summary of contents
Page 1
... NTE2508 (NPN) & NTE2509 (PNP) Silicon Complementary Transistors Features: D High Gain Bandwidth Product High Breakdown Voltage Low Reverse Transfer Capacitance and Excellent HF Response Applications: D High–Definition CRT Display Video Output D Wide–Band Amp Absolute Maximum Ratings: (T Collector to Base Voltage, V Collector to Emitter Voltage, V ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter Output Capacitance NTE2508 NTE2509 Reverse Transfer Capacitance NTE2508 NTE2509 Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage = +25 C unless otherwise specified) A Symbol Test Conditions 30V 1MHz 30V 1MHz 50mA, I CE(sat 50mA, I BE(sat) C .315 (8.0) .118 (3.0) Dia ...