SKM 600 GB126D Sindopower / Semikron, SKM 600 GB126D Datasheet - Page 2
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SKM 600 GB126D
Manufacturer Part Number
SKM 600 GB126D
Description
IGBT; 1200 V VCE; 660 A @ DegC; 20 V; 490 A
Manufacturer
Sindopower / Semikron
Type
Trenchr
Datasheet
1.SKM_600_GB126D.pdf
(4 pages)
Specifications of SKM 600 GB126D
Capacitance, Gate
32 nF
Current, Collector
660 A
Current, Forward
490 A
Energy Rating
103 mJ
Inductance, Collector To Emitter
20 nH (Max.)
Input Capacitance
32 nF (Typ.)
Package Type
D56
Polarity
N-Channel
Primary Type
Si
Resistance, Collector To Emitter
1.8 Milliohms (Typ.)
Resistance, Thermal
0.055 K⁄W (Max.) (Junction-Case)
Resistance, Thermal, Junction To Case
0.055 K/W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-40
Time, Turn-off
670 ns (Typ.)
Time, Turn-on
290 ns (Typ.)
Transistor Type
IGBT
Voltage, Collector To Emitter
1200 V VCE
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
1.7 V
Voltage, Gate To Emitter
±20 V
Voltage, Gate To Emitter Threshold
5.8 V (Typ.)
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
SKM 600GB126D ...
Trench IGBT Module
SKM 600GB126D
SKM 600GAL126D
Preliminary Data
Features
Typical Applications
Remarks
2
SEMITRANS
GB
GAL
®
3
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Characteristics
Symbol
Inverse diode
Freewheeling Diode
Module
11-09-2006 SEN
Conditions
min.
typ.
© by SEMIKRON
max.
Units