SKM 600 GB126D Sindopower / Semikron, SKM 600 GB126D Datasheet - Page 2

• Manufacturer Part Number: SKM 600 GB126D
• Description: IGBT; 1200 V VCE; 660 A @ DegC; 20 V; 490 A
• Manufacturer: Sindopower / Semikron
• Type: Trenchr

Specifications of SKM 600 GB126D

• Capacitance, Gate: 32 nF
• Current, Collector: 660 A
• Current, Forward: 490 A
• Energy Rating: 103 mJ
• Inductance, Collector To Emitter: 20 nH (Max.)
• Input Capacitance: 32 nF (Typ.)
• Package Type: D56
• Polarity: N-Channel
• Primary Type: Si
• Resistance, Collector To Emitter: 1.8 Milliohms (Typ.)
• Resistance, Thermal: 0.055 K⁄W (Max.) (Junction-Case)
• Resistance, Thermal, Junction To Case: 0.055 K/W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -40
• Time, Turn-off: 670 ns (Typ.)
• Time, Turn-on: 290 ns (Typ.)
• Transistor Type: IGBT
• Voltage, Collector To Emitter: 1200 V VCE
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 1.7 V
• Voltage, Gate To Emitter: ±20 V
• Voltage, Gate To Emitter Threshold: 5.8 V (Typ.)
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SKM 600GB126D ...
Trench IGBT Module
SKM 600GB126D
SKM 600GAL126D
Preliminary Data
Features
Typical Applications
Remarks
2
SEMITRANS
GB
GAL
®
3
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Characteristics
Symbol
Inverse diode
Freewheeling Diode
Module
11-09-2006 SEN
Conditions
min.
typ.
© by SEMIKRON
max.
Units