SKM 600 GB126D Sindopower / Semikron, SKM 600 GB126D Datasheet - Page 3

• Manufacturer Part Number: SKM 600 GB126D
• Description: IGBT; 1200 V VCE; 660 A @ DegC; 20 V; 490 A
• Manufacturer: Sindopower / Semikron
• Type: Trenchr

Specifications of SKM 600 GB126D

• Capacitance, Gate: 32 nF
• Current, Collector: 660 A
• Current, Forward: 490 A
• Energy Rating: 103 mJ
• Inductance, Collector To Emitter: 20 nH (Max.)
• Input Capacitance: 32 nF (Typ.)
• Package Type: D56
• Polarity: N-Channel
• Primary Type: Si
• Resistance, Collector To Emitter: 1.8 Milliohms (Typ.)
• Resistance, Thermal: 0.055 K⁄W (Max.) (Junction-Case)
• Resistance, Thermal, Junction To Case: 0.055 K/W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -40
• Time, Turn-off: 670 ns (Typ.)
• Time, Turn-on: 290 ns (Typ.)
• Transistor Type: IGBT
• Voltage, Collector To Emitter: 1200 V VCE
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 1.7 V
• Voltage, Gate To Emitter: ±20 V
• Voltage, Gate To Emitter Threshold: 5.8 V (Typ.)
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SKM 600GB126D ...
Trench IGBT Module
SKM 600GB126D
SKM 600GAL126D
Preliminary Data
Features
Typical Applications
Remarks
3
SEMITRANS
GB
GAL
®
3
Z
Symbol
Z
Z
th
th(j-c)l
th(j-c)D
11-09-2006 SEN
Conditions
Values
© by SEMIKRON
Units