GP2S60B Sharp Electronics, GP2S60B Datasheet - Page 8
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GP2S60B
Manufacturer Part Number
GP2S60B
Description
Manufacturer
Sharp Electronics
Type
Reflectiver
Datasheet
1.GP2S60B.pdf
(15 pages)
Specifications of GP2S60B
Number Of Elements
1
Output Device
Phototransistor
Reverse Breakdown Voltage
6V
Collector-emitter Voltage
35V
Forward Current
50mA
Package Type
SMT
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
100000ns
Rise Time
100000ns
Pin Count
4
Mounting
Surface Mount
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GP2S60B
Manufacturer:
SHARP
Quantity:
10 000
Company:
Part Number:
GP2S60B
Manufacturer:
SHARP
Quantity:
32 000
Part Number:
GP2S60B
Manufacturer:
SHARP
Quantity:
20 000
■ Design Considerations
● Design guide
● Degradation
● Parts
• Light detector (qty. : 1)
• Light emitter (qty. : 1)
• Material
Black polyphenylene sulfi de
Phototransister
1) Regarding to prevention of malfunction
2) Distance characteristic
3) For wiring on a mounting PCB
4) Regarding to mounting this product
This product is not designed against irradiation and incorporates non-coherent IRED.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
This product is assembled using the below parts.
Infrared emitting diode
Category
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
The distance between the photointerrupter and the object to be detected shall be determined the distance
by referencing Fig.10 "Relative collector current vs. distance".
To avoid possibility for short, please do not apply pattern wiring on the back side of the device.
There is a possibility that the opaque molded resin portion may have a crack by force at mounting etc.
Please use this product after well confi rmation of conditions in your production line.
(non-coherent)
Epoxy resin
Category
Case
Silicon (Si)
Material
Gallium arsenide (GaAs)
Glass epoxy resin
Maximum Sensitivity
Material
wavelength (nm)
PCB
930
8
Maximum light emitting
wavelength (nm)
Lead frame plating
wavelength (nm)
Au plating
700 to 1 200
950
Sensitivity
I/O Frequency (MHz)
Response time (μs)
Sheet No.: D3-A02101EN
0.3
20
GP2S60