IRFR420A Vishay, IRFR420A Datasheet - Page 3

• Manufacturer Part Number: IRFR420A
• Description: MOSFET Power N-Chan 500V 3.3 Amp
• Manufacturer: Vishay

Specifications of IRFR420A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91274
S09-0060-Rev. A, 02-Feb-09
0.01
0.1
0.1
10
10
1
1
0.1
1
TOP
BOTTOM
TOP
BOTTOM
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
V
V
DS
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
10
4.5V
20μs PULSE WIDTH
T = 25 C
20μs PULSE WIDTH
T = 150 C
J
J
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
4.5V
10
°
°
100
100
0.01
0.1
Fig. 4 - Normalized On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
4.0
-60 -40 -20
I =
Fig. 3 - Typical Transfer Characteristics
D
T = 150 C
2.5A
J
V
T , Junction Temperature ( C)
5.0
GS
J
, Gate-to-Source Voltage (V)
0
°
T = 25 C
J
20 40 60
6.0
°
Vishay Siliconix
V
20μs PULSE WIDTH
7.0
DS
80 100 120 140 160
= 50V
V
www.vishay.com
8.0
°
GS
=
10V
9.0
3