IRFR420A Vishay, IRFR420A Datasheet - Page 6

• Manufacturer Part Number: IRFR420A
• Description: MOSFET Power N-Chan 500V 3.3 Amp
• Manufacturer: Vishay

Specifications of IRFR420A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
Vishay Siliconix
www.vishay.com
6
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
300
250
200
150
100
50
10 V
Fig. 13a - Basic Gate Charge Waveform
0
V
25
G
Starting T , Junction Temperature ( C)
Q
GS
50
J
Charge
Q
Q
GD
75
G
100
TOP
BOTTOM
125
°
1.1A
1.6A
2.5A
I D
150
Fig. 12d - Maximum Avalanche Energy vs. Drain Current
700
650
600
550
0.0
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.5
0.2 µF
I AV , Avalanche Current ( A)
Current sampling resistors
3 mA
50 kΩ
1.0
0.3 µF
I
G
S09-0060-Rev. A, 02-Feb-09
1.5
Document Number: 91274
D.U.T.
I
D
2.0
+
-
V
DS
2.5