NTD2955 ON Semiconductor, NTD2955 Datasheet - Page 2

• Manufacturer Part Number: NTD2955
• Description: MOSFET Power -60V -12A P-Channel
• Manufacturer: ON Semiconductor

Specifications of NTD2955

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.155 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

3. Indicates Pulse Test: Pulse Width
4. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 3 and 4)
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)
Drain−to−Source Breakdown Voltage (Note 3)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−Source On−State Resistance
Drain−to−Source On−Voltage
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Diode Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(Positive Temperature Coefficient)
(V
(V
(V
(Negative Temperature Coefficient)
(V
(V
(V
(I
(I
(I
(I
S
S
S
GS
GS
GS
DS
GS
GS
GS
= 12 Adc, V
= 12 Adc, V
= 12 A, dI
12 A dI /dt
= 0 Vdc, I
= 0 Vdc, V
= 0 Vdc, V
= V
= −10 Vdc, I
= −10 Vdc, I
= −10 Vdc, I
GS
, I
S
D
/dt = 100 A/ms ,V
GS
GS
D
= −250 mAdc)
DS
DS
= −0.25 mA)
D
D
D
= 0 V)
= 0 V, T
= −60 Vdc, T
= −60 Vdc, T
100 A/
= −6.0 Adc)
= −12 Adc)
= −6.0 Adc, T
J
= 150 C)
Characteristic
DS
GS
V
GS
= 10 Vdc, I
J
J
=
J
= 25 C)
= 150 C)
= 0 V)
= 150 C)
300 ms, Duty Cycle
0 V)
20 Vdc, V
(V
(V
(T
DS
(V
(V
DS
V
J
DD
DD
D
GS
= −48 Vdc, V
= 25 C unless otherwise noted)
= −25 Vdc, V
= 6.0 Adc)
= −30 Vdc, I
= −30 Vdc, I
= −10 V, R
DS
F = 1.0 MHz)
F = 1.0 MHz)
I
I
D
D
= 0 Vdc)
= −12 A)
= −12 A)
http://onsemi.com
GS
G
2%.
GS
D
D
= 9.1 W)
= −10 Vdc,
= −12 A,
= −12 A,
NTD2955
= 0 Vdc,
2
V
Symbol
R
V
V
(BR)DSS
t
t
I
C
Q
I
DS(on)
DS(on)
Q
Q
GS(th)
C
C
V
d(on)
d(off)
DSS
GSS
gFS
Q
t
t
t
oss
t
rss
t
GS
GD
SD
RR
iss
rr
a
b
r
f
T
−2.0
Min
−60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.155
−1.86
−2.8
−1.6
−1.3
0.10
Typ
500
150
4.5
8.0
4.0
7.0
67
50
10
45
26
48
15
50
40
10
−
−
−
−
−
0.180
−100
−100
Max
−4.0
−2.6
−2.0
−2.5
−10
750
250
100
20
85
40
90
30
−
−
−
−
−
−
−
−
−
−
mV/ C
mV/ C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
pF
ns
ns
W