NTD2955 ON Semiconductor, NTD2955 Datasheet - Page 7

• Manufacturer Part Number: NTD2955
• Description: MOSFET Power -60V -12A P-Channel
• Manufacturer: ON Semiconductor

Specifications of NTD2955

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.155 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

V
S
F
1
B
R
G
4
2
3
L
A
K
D
2 PL
0.13 (0.005)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
H
J
0.228
5.80
M
C
T
−T−
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
E
SEATING
PLANE
0.244
0.101
6.20
U
2.58
http://onsemi.com
CASE 369C−01
NTD2955
ISSUE O
DPAK
7
0.118
3.0
0.063
1.6
SCALE 3:1
Z
6.172
0.243
inches
mm
STYLE 2:
DIM
PIN 1. GATE
G
A
B
C
D
E
F
H
J
K
L
R
S
U
V
Z
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.102
0.180
0.025
0.020
0.035
0.155
MIN
0.180 BSC
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.215
0.040
0.050
0.114
MAX
−−−
−−−
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
2.60
4.57
0.63
0.51
0.89
3.93
MIN
4.58 BSC
2.29 BSC
MAX
6.22
6.73
2.38
0.88
0.58
1.14
1.01
0.58
2.89
5.45
1.01
1.27
−−−
−−−