NTD2955 ON Semiconductor, NTD2955 Datasheet - Page 3

• Manufacturer Part Number: NTD2955
• Description: MOSFET Power -60V -12A P-Channel
• Manufacturer: ON Semiconductor

Specifications of NTD2955

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.155 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
25
20
15
10
− 50
5
0
0
0
0
0
Figure 3. On−Resistance versus Drain Current
T
V
V
I
J
D
= 25°C
GS
GS
−V
− 25
= −6 A
Figure 5. On−Resistance Variation with
1
Figure 1. On−Region Characteristics
3
DS
= −10 V
= −10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
2
J
, JUNCTION TEMPERATURE (°C)
0
−I
6
−9.5 V
D
, DRAIN CURRENT (AMPS)
3
TYPICAL PERFORMANCE CURVES
V
and Temperature
25
GS
9
Temperature
= −10 V
4
50
T
− 55°C
J
25°C
= 125°C
12
5
75
6
15
−9 V
100
7
18
125
8
21
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150
−6.5 V
−5.5 V
−8 V
9
−5 V
−7 V
−6 V
NTD2955
175
24
10
3
(T
0.250
0.225
0.200
0.175
0.150
0.125
0.100
0.075
0.050
1000
100
J
24
22
20
18
16
14
12
10
10
8
6
4
2
0
1
= 25°C unless otherwise noted)
2
0
5
Figure 4. On−Resistance versus Drain Current
V
V
T
GS
DS
J
10
−V
−V
= 25°C
= 0 V
3
3
≥ −10 V
DS
Figure 6. Drain−To−Source Leakage
GS
Figure 2. Transfer Characteristics
15
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
4
6
20
Current versus Voltage
D
, DRAIN CURRENT (AMPS)
and Gate Voltage
25
5
V
9
GS
T
−15 V
30
J
= −10 V
T
100°C
= 125°C
J
25°C
12
6
= − 55°C
35
15
7
40
45
18
8
125°C
50
21
9
55
24
10
60