NTD2955 ON Semiconductor, NTD2955 Datasheet - Page 4

• Manufacturer Part Number: NTD2955
• Description: MOSFET Power -60V -12A P-Channel
• Manufacturer: ON Semiconductor

Specifications of NTD2955

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.155 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

1000
100
100
0.1
1200
1000
10
10
800
600
400
200
1
1
0.1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
0
1
10
Figure 11. Maximum Rated Forward Biased
V
I
V
T
V
SINGLE PULSE
T
C
C
D
J
DD
GS
C
GS
iss
rss
= −12 A
= 25°C
= 25°C
V
−V
= −30 V
= −10 V
= −15 V
Figure 9. Resistive Switching Time
DS
5
t
t
Variation versus Gate Resistance
d(off)
d(on)
Figure 7. Capacitance Variation
DS
−V
= 0 V
t
t
r
f
, DRAIN−TO−SOURCE VOLTAGE (V)
GS
R
G
Safe Operating Area
0
, GATE RESISTANCE (W)
1
V
−V
GS
DS
= 0 V
5
R
THERMAL LIMIT
PACKAGE LIMIT
100 ms
10
DS(on)
1 ms
10
LIMIT
10
10 ms
15
dc
T
C
J
C
C
20
= 25°C
oss
iss
rss
http://onsemi.com
100
100
NTD2955
25
4
12.5
7.5
2.5
15
10
5
0
0
Figure 8. Gate−To−Source and Drain−To−Source
15
10
V
5
0
Figure 10. Diode Forward Voltage versus Current
DS
0
Q
Figure 12. Diode Reverse Recovery Waveform
GS
2
V
T
I
S
GS
J
0.25
= 25°C
−V
Q
Voltage versus Total Charge
= 0 V
4
T
SD
, TOTAL GATE CHARGE (nC)
, SOURCE−TO−DRAIN VOLTAGE (V)
t
p
0.5
6
Q
GD
di/dt
0.75
Q
8
t
T
a
t
10
rr
t
1
b
I
S
0.25 I
12
1.25
S
I
T
D
J
= 12 A
14
= 25°C
V
1.5
GS
TIME
16
60
50
40
30
20
10
0
1.75