SI3446DV-T1 Vishay, SI3446DV-T1 Datasheet - Page 2

• Manufacturer Part Number: SI3446DV-T1
• Description: MOSFET Power 20V 5.3A 2W
• Manufacturer: Vishay

Specifications of SI3446DV-T1

• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Notes
a.
b.
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2
Si3446DV
Vishay Siliconix
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
a
_
Symbol
V
r
r
I
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
V
V
I
DS
D
DS
^ 1 A, V
I
= 10 V, V
F
= 20 V, V
V
V
V
V
V
V
V
V
V
= 1.7 A, di/dt = 100 A/ms
I
DS
Test Condition
GS
GS
DS
DS
S
DS
DS
DD
DD
= 1.7 A, V
= V
= 5 V, V
= 4.5 V, I
= 0 V, V
= 2.5 V, I
= 20 V, V
= 10 V, I
= 10 V, R
= 10 V, R
GEN
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
= 0 V, T
D
GS
GS
GS
D
D
GS
D
= 250 mA
L
L
= 5.3 A
= 4.4 A
= 4.5 V
= 10 W
= 10 W
= "12 V
= 5.3 A
= 0 V
= 0 V
J
D
G
= 70_C
= 5.3 A
= 6 W
Min
0.6
0.5
10
0.032
0.045
Typ
2.5
2.2
20
10
30
50
65
35
60
S-51451—Rev. C, 01-Aug-05
Document Number: 70715
"100
Max
0.045
0.065
100
1.6
1.2
3.0
20
50
80
60
90
1
5
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
W