SI3446DV-T1 Vishay, SI3446DV-T1 Datasheet - Page 3

• Manufacturer Part Number: SI3446DV-T1
• Description: MOSFET Power 20V 5.3A 2W
• Manufacturer: Vishay

Specifications of SI3446DV-T1

• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 70715
S-51451—Rev. C, 01-Aug-05
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
8
4
0
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 5.3 A
On-Resistance vs. Drain Current
= 10 V
V
V
4
2
GS
DS
1
Q
Output Characteristics
= 2.5 V
g
– Drain-to-Source Voltage (V)
V
I
D
– Total Gate Charge (nC)
GS
– Drain Current (A)
Gate Charge
= 5, 4.5, 4, 3.5, 3 V
8
4
2
12
6
V
GS
3
= 4.5 V
16
8
_
1, 1.5 V
2.5 V
2 V
20
10
4
1500
1200
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
–50
0.0
0
On-Resistance vs. Junction Temperature
V
I
C
D
GS
rss
–25
= 5.3 A
0.5
= 4.5 V
V
V
4
C
DS
GS
T
oss
Transfer Characteristics
J
0
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
1.0
T
C
Capacitance
25
= 125_C
8
C
iss
Vishay Siliconix
1.5
50
12
75
Si3446DV
2.0
–55_C
100
25_C
www.vishay.com
16
2.5
125
150
3.0
20
3