NTD3055-150 ON Semiconductor, NTD3055-150 Datasheet - Page 5

• Manufacturer Part Number: NTD3055-150
• Description: MOSFET Power 60V 9A N-Channel
• Manufacturer: ON Semiconductor

Specifications of NTD3055-150

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.122 Ohms
• Forward Transconductance Gfs (max / Min): 5.4 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 28.8 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTD3055−150
NTD3055−150G
NTD3055−150−1
NTD3055−150−1G
NTD3055−150T4
NTD3055−150T4G
0.1
10
1
0.00001
0.05
0.01
D = 0.5
0.2
0.1
SINGLE PULSE
Device
0.0001
0.001
Figure 13. Thermal Response
http://onsemi.com
NTD3055−150
t, TIME (s)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
DPAK−3
DPAK−3
DPAK
DPAK
DPAK
DPAK
5
0.01
0.1
P
(pk)
2500 Tape & Reel
2500 Tape & Reel
DUTY CYCLE, D = t
75 Units/Rail
75 Units/Rail
75 Units/Rail
75 Units/Rail
Shipping
t
1
t
2
1
†
1
/t
2
10