NTD3055-150 ON Semiconductor, NTD3055-150 Datasheet - Page 6

• Manufacturer Part Number: NTD3055-150
• Description: MOSFET Power 60V 9A N-Channel
• Manufacturer: ON Semiconductor

Specifications of NTD3055-150

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.122 Ohms
• Forward Transconductance Gfs (max / Min): 5.4 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 28.8 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

V
S
F
1
B
R
G
4
2
3
L
A
K
D
2 PL
0.13 (0.005)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
H
J
0.228
5.80
M
C
T
−T−
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
E
0.244
0.101
6.20
2.58
SEATING
PLANE
U
http://onsemi.com
NTD3055−150
CASE 369C−01
ISSUE O
DPAK
6
0.118
3.0
0.063
1.6
SCALE 3:1
Z
6.172
0.243
inches
mm
STYLE 2:
DIM
PIN 1. GATE
A
B
C
D
E
F
G
H
K
L
R
S
U
V
Z
J
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.102
0.180
0.025
0.020
0.035
0.155
MIN
0.180 BSC
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.215
0.040
0.050
0.114
MAX
−−−
−−−
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
2.60
4.57
0.63
0.51
0.89
3.93
4.58 BSC
2.29 BSC
MAX
6.22
6.73
2.38
0.88
0.58
1.14
1.01
0.58
2.89
5.45
1.01
1.27
−−−
−−−