SI5457DC-T1-GE3 Vishay, SI5457DC-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI5457DC-T1-GE3
• Description: MOSFET P-CH 20V 6A CHIPFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5457DC-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 4.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 5.7W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 67013
S10-2011-Rev. A, 06-Sep-10
0.08
0.06
0.04
0.02
20
16
12
10
0
8
4
0
8
6
4
2
0
0
0
0
I
D
= 6.5 A
On Resistance vs. Drain Current
0.5
5
4
V
V
DS
Output Characteristics
DS
Q
g
- Drain-to-Source Voltage (V)
= 5 V
- Total Gate Charge (nC)
1.0
V
10
V
I
D
DS
GS
Gate Charge
- Drain Current (A)
8
= 10 V
= 5 V thru 3 V
V
1.5
15
GS
V
GS
V
DS
= 2.5 V
12
= 3.6 V
= 16 V
2.0
20
V
GS
V
V
V
GS
GS
GS
= 4.5 V
16
2.5
25
= 1.5 V
= 2 V
= 2.5 V
3.0
20
30
1.6
1.4
1.2
1.0
0.8
0.6
1800
1500
1200
900
600
300
- 50
5
4
3
2
1
0
0
0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
C
oss
T
0
V
V
J
0.5
Transfer Characteristics
DS
GS
3
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
25
iss
V
Capacitance
GS
T
C
= 4.5 V; 3.6 V; I
50
= 125 °C
1.0
Vishay Siliconix
6
T
C
V
75
GS
= 25 °C
Si5457DC
= 2.5 V; I
100
D
www.vishay.com
1.5
= 4.9 A
9
T
C
D
125
= - 55 °C
= 2 A
150
2.0
12
3