SI5457DC-T1-GE3 Vishay, SI5457DC-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI5457DC-T1-GE3
• Description: MOSFET P-CH 20V 6A CHIPFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5457DC-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 4.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 5.7W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Si5457DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
100
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
10
1
- 50
0
Forward Diode Voltage vs. Temperature
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
T
J
I
= 150 °C
D
0.6
50
= 250 μA
75
0.01
100
0.1
0.8
10
T
1
0.1
J
= 25 °C
100
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
T
Limited by R
1.0
GS
A
125
= 25 °C
> minimum V
V
DS
150
1.2
- Drain-to-Source Voltage (V)
DS(on)
1
GS
*
BVDSS Limited
at which R
10
DS(on)
0.12
0.10
0.08
0.06
0.04
0.02
is specified
50
40
30
20
10
0
0
1 ms
10 ms
100 ms
1 s
10 s
DC
10
0
-3
On-Resistance vs. Gate-to-Source Voltage
I
D
= 4.9 A
100
10
1
-2
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
10
-1
2
Time (s)
T
S10-2011-Rev. A, 06-Sep-10
J
1
= 25 °C
Document Number: 67013
3
10
T
J
= 125 °C
4
100
600
5