NTMS4916NR2G ON Semiconductor, NTMS4916NR2G Datasheet - Page 2

• Manufacturer Part Number: NTMS4916NR2G
• Description: MOSFET N-CH 30V 11.4A SO8 FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMS4916NR2G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1376pF @ 25V
• Power - Max: 890mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
Parameter
V
V
(T
V
(BR)DSS
Symbol
V
GS(TH)
Q
Q
R
Q
(BR)DSS
J
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
G(TOT)
Q
DS(on)
C
V
C
g
d(on)
d(off)
DSS
GSS
G(TH)
t
R
L
L
L
= 25°C unless otherwise specified)
RR
t
t
FS
oss
t
t
SD
rss
GS
GD
RR
iss
a
b
D
G
r
f
S
G
/T
/T
J
J
V
V
V
V
V
GS
GS
GS
GS
http://onsemi.com
GS
V
= 0 V, V
= 0 V, f = 1.0 MHz, V
= 4.5 V, V
GS
= 0 V, I
= 10 V, V
V
V
V
V
V
V
I
GS
V
DS
GS
D
GS
DS
GS
= 0 V, d
GS
= 1.0 A, R
Test Condition
= 10 V, V
= 0 V, V
= V
= 0 V, I
= 1.5 V, I
= 4.5 V, I
= 10 V, I
S
2
DS
T
I
S
A
= 2.0 A
DS
DS
DS
= 30 V
= 2.0 A
= 25°C
IS
, I
= 15 V, I
/d
= 15 V, I
D
GS
D
DS
G
t
= 250 mA
D
D
D
= 250 mA
= 100 A/ms,
= 6.0 W
= ±20 V
= 7.5 A
= 12 A
= 10 A
= 15 V,
T
T
T
T
DS
D
D
J
J
J
J
= 125°C
= 7.5 A
= 125°C
= 7.5 A
= 25°C
= 25°C
= 25 V
Min
1.0
30
0.740
0.570
1376
6.75
2.44
15.6
30.7
14.3
16.4
0.66
0.77
Typ
401
205
1.7
9.0
6.5
9.4
7.4
0.2
1.5
16
23
15
28
32
20
5
4
±100
Max
1.0
2.5
9.0
1.0
10
12
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
nC
nH
ns
ns
W
V
V
S
V