NTMS4916NR2G ON Semiconductor, NTMS4916NR2G Datasheet - Page 3

• Manufacturer Part Number: NTMS4916NR2G
• Description: MOSFET N-CH 30V 11.4A SO8 FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMS4916NR2G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1376pF @ 25V
• Power - Max: 890mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.030
0.025
0.020
0.015
0.010
0.005
0.000
1.70
1.60
1.50
1.40
1.30
1.20
1.10
1.00
0.90
0.80
0.70
25
20
15
10
5
0
0
3
−50
Figure 3. On−Resistance vs. Gate−to−Source
I
V
D
0.5
GS
= 12 A
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics
−25
3.0 V
V
4
V
= 10 V
7 V
DS
GS
10V
1
T
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
J
4 V
, JUNCTION TEMPERATURE (°C)
0
5
1.5
5 V
25
Temperature
2
6
Voltage
2.5
2.2 V
50
7
3
TYPICAL PERFORMANCE CURVES
2.8 V
75
3.5
2.6 V
8
T
I
T
2.5 V
D
J
2.4 V
J
100
= 12 A
= 25°C
= 25°C
4
2.3 V
9
http://onsemi.com
125
4.5
10
5
150
3
10000
0.009
0.008
0.007
0.006
0.005
1000
0.01
100
50
40
30
20
10
10
0
1
2
5
Figure 4. On−Resistance vs. Drain Current and
V
Figure 6. Drain−to−Source Leakage Current
T
DS
J
V
4
= 25°C
GS
≥ 10 V
1.5
V
V
Figure 2. Transfer Characteristics
DS
= 0 V
GS
T
10
6
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
= 25°C
T
2
I
J
D,
8
= 125°C
DRAIN CURRENT (A)
Gate Voltage
vs. Voltage
10
15
2.5
T
T
J
T
V
V
J
J
= 150°C
GS
GS
12
= 100°C
= −55°C
= 4.5 V
= 10 V
3
14
20
16
3.5
18
25
4
20
4.5
22
30