NTMFS5832NLT1G ON Semiconductor, NTMFS5832NLT1G Datasheet - Page 3

• Manufacturer Part Number: NTMFS5832NLT1G
• Description: MOSFET N-CH 40V 110A SO8 FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS5832NLT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 25V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.020
0.015
0.010
0.005
0.000
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
0
−50
0
0
V
I
Figure 3. On−Resistance vs. Gate−to−Source
D
GS
10 V
= 20 A
1
−25
Figure 5. On−Resistance Variation with
= 10 V
Figure 1. On−Region Characteristics
V
V
DS
GS
T
2
1
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
3
5.0 V
25
Temperature
4
2
Voltage
50
5
6
3
75
7
TYPICAL CHARACTERISTICS
100
8
4
T
T
I
J
D
J
= 25°C
125
http://onsemi.com
= 25°C
= 20 A
4.5 V
4.0 V
3.5 V
3.0 V
9
150
10
5
3
100000
10000
0.007
0.006
0.005
0.004
0.003
0.002
1000
200
150
100
100
50
0
10
10
2
Figure 4. On−Resistance vs. Drain Current and
T
V
V
Figure 6. Drain−to−Source Leakage Current
J
GS
DS
T
= 25°C
20
J
= 0 V
≥ 10 V
= 125°C
V
V
Figure 2. Transfer Characteristics
DS
GS
30
T
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
J
= 25°C
40
I
D
, DRAIN CURRENT (A)
20
3
Gate Voltage
50
vs. Voltage
V
T
V
T
GS
J
GS
J
T
= 125°C
= 150°C
J
= 4.5 V
60
= 10 V
= −55°C
70
30
4
80
90
100 110
40
5