NTMFS5832NLT1G ON Semiconductor, NTMFS5832NLT1G Datasheet - Page 4

• Manufacturer Part Number: NTMFS5832NLT1G
• Description: MOSFET N-CH 40V 110A SO8 FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS5832NLT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 25V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

4000
3500
3000
2500
2000
1500
1000
1000
1000
0.01
500
100
100
0.1
10
10
0
1
1
0.1
0
1
C
V
I
V
t
R
Thermal Limit
Package Limit
D
Figure 9. Resistive Switching Time Variation
V
Single Pulse
T
f
Figure 11. Maximum Rated Forward Biased
rss
DD
GS
C
GS
DS(on)
= 20 A
C
= 25°C
= 20 V
= 4.5 V
oss
= 10 V
V
V
C
DS
DS
Figure 7. Capacitance Variation
Limit
iss
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
10
R
t
G
d(off)
Safe Operating Area
t
vs. Gate Resistance
r
, GATE RESISTANCE (W)
1
20
10
10
TYPICAL CHARACTERISTICS
30
V
T
J
GS
= 25°C
http://onsemi.com
= 0 V
t
d(on)
10 ms
100 ms
1 ms
10 ms
dc
100
40
100
4
10
8
6
4
2
0
0
100
140
120
100
80
60
40
20
80
60
40
20
Q
0
0
25
gs
0.5
V
Figure 10. Diode Forward Voltage vs. Current
V
T
DS
Figure 8. Gate−to−Source Voltage vs. Total
Figure 12. Maximum Avalanche Energy vs.
J
10
GS
T
= 25°C
J
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
Q
Q
V
SD
g
gd
, TOTAL GATE CHARGE (nC)
50
Starting Junction Temperature
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
20
Q
T
75
0.7
30
Charge
40
100
0.8
V
GS
T
I
D
J
50
= 20 A
= 25°C
0.9
125
I
D
= 53 A
60
90
80
70
60
50
40
30
20
10
0
150
1.0