NCN6000DTBR2 ON Semiconductor, NCN6000DTBR2 Datasheet - Page 24

IC INTERFACE SMART CARD 20TSSOP

NCN6000DTBR2

Manufacturer Part Number
NCN6000DTBR2
Description
IC INTERFACE SMART CARD 20TSSOP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCN6000DTBR2

Applications
ATM Terminals, Gas Pumps, ISM
Interface
Microcontroller
Voltage - Supply
2.7 V ~ 6 V
Package / Case
20-TSSOP
Mounting Type
Surface Mount
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NCN6000DTBR2OSTR

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Table 5. Ceramic/Electrolytic Capacitors Comparison
NCN6000 characterization, the best comprise, at time of
printing
6.8 mF/10 V/Ceramic/X7R capacitor in parallel to achieve
the CRD_VCC filtering. The ESR will not extend 50 mW
over the temperature range and the combination of standard
parts provide an acceptable –20% to +20% tolerance,
Figure 22. External Capacitor Current Charge and
Manufacturers
Based on the experiments carried out during the
MURATA
VISHAY
VISHAY
this
CRD_VCC Voltage Ripple.
document,
Figure 21. CRD_VCC Ripple as a Function of the Capacitor Technology
Tantalum/594C/593C
Electrolytic Low Cost
CERAMIC/GRM225
Electrolytic/94SV
Type/Series
Top Trace = Electrolytic or Tantalum 10 mF
Bottom Trace = X7R 10 mF ceramic
The high ripple pulse across CRD_VCC is the consequence
of the large ESR of the electrolytic capacitor.
is
to
use
http://onsemi.com
Format
0805
two
NCN6000
24
together with a low cost. Obviously, the capacitor must be
SMD type to achieve the extremely low ESR and ESL
necessary for this application. Figure 21 illustrates the
CRD_VCC ripple observed in the NCN6000 demo board
depending upon the type of capacitor used to filter the output
voltage.
NOTES: Rload = 100 W , Vbat = 5.0 V, CRD_VCC = 5.0 V
10 mF/6.3 V
Max Value
10 mF/16 V
10 mF/10 V
10 mF/10 V
Figure 23. CRD_VCC Voltage Ripple
Cout = 10 mF/X7R, CRD_CLK = Stop High
+80%/−20%
−20%/+20%
−35%/+50%
Tolerance
C= 10 mF
Electrolytic or Tantalum
C= 10 mF
Ceramic
Typ. Z @ 500 kHz
450 mW
400 mW
30 mW
2.0 W

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