NIS1050MNTBG ON Semiconductor, NIS1050MNTBG Datasheet

IC PMIC INTERFACE PROTECT 6-WDFN

NIS1050MNTBG

Manufacturer Part Number
NIS1050MNTBG
Description
IC PMIC INTERFACE PROTECT 6-WDFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of NIS1050MNTBG

Applications
Mobile Communications
Voltage - Supply
3 V ~ 30 V
Package / Case
6-VDFN Exposed Pad
Mounting Type
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Interface
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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NIS1050
Protection Interface Circuit
for PMICs with Integrated
OVP Control
PMICs from the leading mobile phone and UMPC chipset vendors. It
includes a highly stable low-current LDO and a low impedance power
N-Channel MOSFET.
the NFET is the external pass element for the OVIC circuit. These
stages combine with the internal PMIC to protect the charging circuit
from low-impedance overvoltage conditions that can occur from
either the AC/DC or USB supply.
surface mount package.
Features
Typical Applications
USB
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 2
The NIS1050 is a protection IC targeted at the latest generation of
The LDO provides a low current, five volt supply to the PMIC, and
The NIS1050 is available in the low−profile 6-lead 2x2mm WDFN6
Regulator
Capacitors
Phone and UMPC Chipset Vendors
Lower Power Dissipation and Higher Efficiency vs. Zener Shunt
LDO Highly Stable across Temperature, Operates Without Bypass
Wide 3-30 V Power Supply Voltage Input Range
Low−Profile (0.75mm) 6-Lead 2x2mm WDFN6 Package
This is a Pb−Free Device
Power Interface for New Generation PMICs from Leading Mobile
Vbus
3,7
6,8
2
1
NIS1050
Figure 1. Typical Application
LDO
10k
4
5
4.7uF
OVP_CLAMP
PMIC
OVP_SNS
OVP_CTL
VCHG
VCHG
Reference
A) If okay, FET is closed
B) If not okay, FET is opened
Bandgap
2
V_REF_2
V_REF_1
Detector
Voltage
control
inputs
other
3
V_IN_OKAY
Controller
LDO
1
Over−Voltage
Protection
4
5.30
5.25
5.20
5.15
5.10
5.05
5.00
4.95
4.90
4.85
4.80
†For information on tape and reel specifications,
NIS1050MNTBG
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
−40
Figure 2. Output Voltage Variation with
Device
CASE 506AN
WDFN6, 2x2
T
−15
ORDERING INFORMATION
J
, JUNCTION TEMPERATURE (°C)
PM = Specific Device Code
M
http://onsemi.com
= Date Code
10
Temperature
(Pb−Free)
Package
WDFN6
35
Publication Order Number:
60
3000 / Tape & Reel
DIAGRAMS
MARKING
1
Shipping
85
PM M
NIS1050/D
110

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NIS1050MNTBG Summary of contents

Page 1

... USB 4.7uF Figure 1. Typical Application © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 2 NIS1050MNTBG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 5.30 5.25 Over− ...

Page 2

Table 1. FUNCTIONAL PIN DESCRIPTION Pin Function 1 Source This is the source of the power FET and connects to the PMIC pin of the same name. 2 Gate This pin is the gate of the FET switch ...

Page 3

Table 4. ELECTRICAL CHARACTERISTICS Characteristics POWER FET Zero Gate Voltage Drain Current ( 85°C J Gate-to-Source Leakage Current ( Gate Threshold Voltage ( ...

Page 4

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 4. On−Region Characteristics 5.30 5.25 5.20 5.15 5.10 5.05 5.00 4.95 4.90 4.85 4.80 −40 Mounting ...

Page 5

... NOTE 3 0.05 C 0.35 6X *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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