PC28F128J3D75B Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., PC28F128J3D75B Datasheet - Page 24

• Manufacturer Part Number: PC28F128J3D75B
• Description: IC FLASH 128MBIT 75NS 64EZBGA
• Manufacturer: Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
• Series: -r

Specifications of PC28F128J3D75B

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16Mx8, 8Mx16)
• Speed: 75ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 872768; 872768TR; 872768TR; PC28F128J3D75 872768; PC28F128J3D75B; PC28F128J3D75BTR

Table 10: Read Operations (Sheet 2 of 2)
Notes:
1.
2.
3.
4.
5.
6.
Datasheet
24
R2
R3
R4
R5
R6
R7
R8
R9
R10
R11
R12
R13
R14
R15
R16
#
CE
CE0, CE1, or CE2 that disables the device (see
256-Mb” on page 31
See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.
OE# may be delayed up to t
“Chip Enable Truth Table for 32-, 64-, 128- and 256-Mb” on page 31
See
Equivalent Testing Load Circuit” on page 30
Sampled, not 100% tested.
For devices configured to standard word/byte read mode, R15 (t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVQV
ELQV
GLQV
PHQV
ELQX
GLQX
EHQZ
GHQZ
OH
ELFL/
FLQV/
FLQZ
EHEL
APA
GLQV
X
Sym
Figure 15, “AC Input/Output Reference Waveform” on page 30
low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CE
t
t
ELFH
FHQV
Asynchronous Specifications V
Address to Output Delay
CE
OE# to Non-Array Output Delay
RP# High to Output Delay
CE
OE# to Output in Low Z
CE
OE# High to Output in High Z
Output Hold from Address, CE
Change, Whichever Occurs First
CE
BYTE# to Output Delay
BYTE# to Output in High Z
CEx High to CEx Low
Page Address Access Time
OE# to Array Output Delay
X
X
X
X
to Output Delay
to Output in Low Z
High to Output in High Z
Low to BYTE# High or Low
).
ELQV
Parameter
-t
GLQV
after the first edge of CE0, CE1, or CE2 that enables the device (see
X
, or OE#
Table 16, “Chip Enable Truth Table for 32-, 64-, 128- and
CC
= 2.7 V–3.6 V
for testing characteristics.
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Density
128 Mbit
256 Mbit
128 Mbit
256 Mbit
128 Mbit
256 Mbit
32 Mbit
64 Mbit
32 Mbit
64 Mbit
32 Mbit
64 Mbit
All
All
All
All
APA
(3)
) will equal R2 (t
and V
Min
0
0
0
0
CCQ
= 2.7 V–3.6 V
X
AVQV
and
Max
high is defined as the first edge of
150
180
210
210
75
75
75
95
75
75
75
95
25
25
15
10
25
25
1
1
) without impact on t
).
Figure 16, “Transient
(3)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
December 2007
Table 16,
ELQV
Notes
1,2,5
1,2,5
1,2,5
1,2,4
1,2,4
1,2,5
1,2,5
1,2,5
1,2,5
1,2,5
316577-06
5, 6
1,2
1,2
1,2
1,2
1,2
1,2
1,2
1,2
1,2
1,2
1,2
1,2
1,2
.