PC28F320J3D75B Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., PC28F320J3D75B Datasheet - Page 6

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PC28F320J3D75B

Manufacturer Part Number
PC28F320J3D75B
Description
IC FLASH 32MBIT 75NS 64EZBGA
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
-r
Datasheet

Specifications of PC28F320J3D75B

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4Mx8, 2Mx16)
Speed
75ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
872833
872833TR
872833TR
PC28F320J3D75 S L8QY
PC28F320J3D75B
PC28F320J3D75BTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PC28F320J3D75B
Manufacturer:
Micron Technology Inc
Quantity:
10 000
1.0
1.1
1.2
Datasheet
6
AMIN
AMAX
Block
Clear
Program
Set
VPEN
V
CUI
OTP
PLR
PEN
Introduction
This document contains information pertaining to the Numonyx™ Embedded Flash
Memory (J3 v D) device features, operation, and specifications.
The Numonyx™ Embedded Flash Memory J3 Version D (J3 v. D) provides improved
mainstream performance with enhanced security features, taking advantage of the
high quality and reliability of the NOR-based Intel 0.13 µm ETOX* VIII process
technology. Offered in 256-Mbit, 128-Mbit, 64-Mbit, and 32-Mbit densities,
theNumonyx™ Embedded Flash Memory (J3 v D, Monolithic) device brings reliable,
low-voltage capability (3 V read, program, and erase) with high speed, low-power
operation. The Numonyx™ Embedded Flash Memory (J3 v D, Monolithic) device takes
advantage of proven manufacturing experience and is ideal for code and data
applications where high density and low cost are required, such as in networking,
telecommunications, digital set top boxes, audio recording, and digital
imaging.Numonyx Flash Memory components also deliver a new generation of forward-
compatible software support. By using the Common Flash Interface (CFI) and Scalable
Command Set (SCS), customers can take advantage of density upgrades and optimized
write capabilities of future Numonyx Flash Memory devices.
The J3v.D product family is also planned on the 65nm process lithography, 65nm AC
timing changes are noted in this datasheet and should be taken into account for all new
designs.
Nomenclature
Acronyms
All Densities
All Densities
32 Mbit
64 Mbit
128 Mbit
256 Mbit
A group of flash cells that share common erase circuitry and erase simultaneously.
Indicates a logic zero (0)
Writes data to the flash array
Indicates a logic one (1)
Refers to a signal or package connection name
Refers to timing or voltage levels
Command User Interface
One Time Programmable
Protection Lock Register
AMIN = A0 for x8
AMIN = A1 for x16
AMAX = A21
AMAX = A22
AMAX = A23
AMAX = A24
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
December 2007
316577-06

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