QSB320FTR Fairchild Optoelectronics Group, QSB320FTR Datasheet
QSB320FTR
Manufacturer Part Number
QSB320FTR
Description
PHOTOTRANSISTOR IR 880NM 2-PLCC
Manufacturer
Fairchild Optoelectronics Group
Datasheet
1.QSB320.pdf
(3 pages)
Specifications of QSB320FTR
Voltage - Collector Emitter Breakdown (max)
35V
Current - Collector (ic) (max)
15mA
Current - Dark (id) (max)
200nA
Wavelength
880nm
Viewing Angle
120°
Power - Max
165mW
Mounting Type
Surface Mount
Orientation
Top View
Package / Case
PLCC-2
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
QSB320FTR
Manufacturer:
FS8
Quantity:
6 000
Part Number:
QSB320FTR
Manufacturer:
FSC
Quantity:
20 000
DS300386
2001 Fairchild Semiconductor Corporation
COLLECTOR
PARAMETER
Peak Sensitivity Wavelength
Wavelength Sensitivity Range
Reception Angle
Collector Emitter Dark Current
Collector Emitter Breakdown
Emitter Collector Breakdown
On-State Collector Current
Saturation Voltage
Rise Time
Fall Time
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL / OPTICAL CHARACTERISTICS
Operating Temperature
Storage Temperature
Soldering Temperature (Flow)
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Power Dissipation
unless otherwise specified.
0.134 (3.4)
0.118 (3.0)
2/26/01
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.091 (2.3)
0.083 (2.1)
(1)
Parameter
0.024 (0.6)
0.016 (0.4)
0.094 (2.4)
0.035 (0.9)
0.028 (0.7)
(2,3)
E
e
E
e
= 0.5 mW/cm
= 0.1 mW/cm
0.007 (.18)
0.005 (.12)
V
CC
TEST CONDITIONS
V
CE
= 5 V, R
I
E
= 25 V, E
I
I
C
C
= 100 µA
(T
= 1 mA
= 1 mA
A
2(4)
2(4)
L
= 25°C unless otherwise specified)
Symbol
0.043 (1.1)
0.020 (0.5)
0.083 (2.1)
0.067 (1.7)
, I
T
= 100
0.041 (0.1)
T
T
V
V
, V
SOL-F
P
e
C
OPR
STG
I
CE
EC
C
D
= 0
= 0.05 mA
CE
= 5 V
260 for 10 sec
1 OF 3
INFRARED PHOTOTRANSISTOR
-55 to +100
-55 to +100
(T
Rating
A
165
• Surface Mount PLCC-2 Package
• Wide Reception Angle, 120°
• High Sensitivity
• Phototransistor Output
• Matched Emitter: QEB421
35
15
5
=25°C)
FEATURES
SYMBOL
V
BV
BV
I
CE (SAT)
C (ON)
SURFACE MOUNT SILICON
I
t
t
PS
SR
D
CEO
ECO
r
f
Unit
mW
mA
°C
°C
°C
V
V
MIN
400
30
16
—
—
—
—
—
—
5
1. Derate power dissipation linearly
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
4.
NOTES
2.2 mW/°C above 25°C.
are recommended as cleaning
agents.
TYP
880
120
= 940 nm.
—
—
—
—
—
—
8
8
SCHEMATIC
QSB320
www.fairchildsemi.com
1000
MAX
200
0.3
—
—
—
—
—
—
—
COLLECTOR
EMITTER
UNITS
Deg.
nm
nm
µA
nA
µs
µs
V
V
V
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QSB320FTR Summary of contents
Page 1
PACKAGE DIMENSIONS 0.118 (3.0) 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) COLLECTOR 0.024 (0.6) 0.016 (0.4) NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 ...
Page 2
Fig.1 Dark Current Vs. Ambient Temperature 3 10 Normalized to =25V -Ambient Temperature ( Fig.3 Light Current Vs. Collector to Emitter ...
Page 3
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT ...