SJDP120R045 SEMISOUTH, SJDP120R045 Datasheet - Page 3

• Manufacturer Part Number: SJDP120R045
• Description: JFET, SIC, N-ON, 1200V, 48A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJDP120R045

• Rohs Compliant: YES
• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Power Dissipation Pd: 208W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 48A

SJDP120R045 Rev1.3
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
120
100
60
50
40
30
20
10
Figure 1. Typical Output Characteristics
Figure 3. Typical Output Characteristics
80
60
40
20
0
0
0
0
0.0
I
I
D
D
= f(V
= f(V
Figure 5. Gate Current
V
1
V
DS
1
I
V
DS
DS
DS
G
, Drain-Source Voltage (V)
GS
); T
, Drain-Source Voltage (V)
= f(V
); T
0.5
, Gate-Source Voltage (V)
j
j
= 150 ° C; parameter: V
= 25 ° C; parameter: V
GS
2
); parameter: T
2
1.0
3
3
j
1.5
150
GS
4
GS
25
4
o
o
C
-1.0 V
-2.0 V
C
-2.0 V
-1.0 V
0.0 V
2.0 V
1.0 V
0.0 V
1.0 V
2.0 V
2.0
5
5
PRELIMINARY
3/6
Figure 4. Typical Transfer Characteristics
Figure 2. Typical Output Characteristics
Figure 6. Drain-Source On-resistance
120
100
70
60
50
40
30
20
10
80
60
40
20
0
0
1.00
0.10
0.01
-5.00
0
I
R
D
DS(on)
= f(V
0
I
D
= f(V
DS
= f(I
V
V
1
); T
GS
DS
GS
D
, Gate-Source Voltage (V)
-3.00
, Drain-Source Voltage (V)
j
); V
); V
= 100 ° C; parameter: V
I
GS
D
DS
, Drain Current (A)
50
SJDP120R045
2
= 2.0; parameter: T
= 5 V; T
150
Silicon Carbide
o
C
-1.00
j
100
= 25
3
o
C
100
o
C
GS
j
4
1.00
May 2011
-2.0 V
25
-1.0 V
1.0 V
2.0 V
0.0 V
o
C
150
5