SDA10S120 Semisouth, SDA10S120 Datasheet

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SDA10S120

Manufacturer Part Number
SDA10S120
Description
DIODE, SIC, 1200V, 10A, TO220; Diode Type: SiC Schottky; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm...
Manufacturer
Semisouth
Datasheet
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Non-Repetitive Forward Surge
Current
Power Dissipation
Operating and Storage Temperature
Silicon Carbide Power Schottky Diode
Features:
- Positive Temperature Coefficient for Ease of Paralleling
- Temperature Independent Switching Behavior
- 175 ° C Maximum Operating Temperature
- Zero Reverse Recovery Current
- Zero Forward Recovery Voltage
Applications:
- Solar Inverter
- SMPS
- Power Factor Correction
- Induction Heating
- UPS
- Motor Drive
MAXIMUM RATINGS
SDA10S120 Rev 1.3
Parameter
Symbol
T
V
P
I
I
V
j
, T
FRM
FSM
RRM
I
TOT
DC
F
stg
T
T
T
C
C
C
PRELIMINARY
= 25 ° C, t
TO-220
= 25 ° C, t
= 125 ° C, D = 0.1
3
T
T
Conditions
T
1/5
T
C
C
C
j
< 145 ° C
< 100 ° C
= 25 ° C
= 25 ° C
P
P
= 10 ms
= 10 us
1
2
V
Q
I
DC
F
c
Product Summary
-55 to +175
SDA10S120
Silicon Carbide
Value
1200
1200
250
136
Internal Schematic
10
17
50
45
K(1)
K(1)
1200
10
40
K(3)
K(3)
A(2)
A(2)
March 2011
nC
V
A
Unit
° C
W
V
A

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SDA10S120 Summary of contents

Page 1

... Induction Heating - UPS - Motor Drive MAXIMUM RATINGS Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Peak Repetitive Forward Current Non-Repetitive Forward Surge Current Power Dissipation Operating and Storage Temperature SDA10S120 Rev 1.3 PRELIMINARY 3 TO-220 Symbol Conditions ° C RRM < ...

Page 2

... Total Capacitive Charge Total Capacitance 20 125 °C 25 ° Forward Voltage (V) F Figure 1. Typ. Forward Characteristics I = f(V ); parameter SDA10S120 Rev 1.3 PRELIMINARY Symbol Conditions unless otherwise stated j Symbol Conditions ° 175 ° ...

Page 3

... C Figure 3. Max Forward Current < 175 ° 1.0E+01 1.0E+00 .90 .70 .50 1.0E-01 .10 .05 .02 1.0E-02 .01 0.005 0.002 1.0E-03 1.0E-06 1.0E-05 SDA10S120 Rev 1.3 PRELIMINARY 150 175 200 th,JC(max) 1.0E-04 1.0E- Pulse Width (s) P Figure 5. Transient Thermal Impedance Z = f(t ); parameter: Duty Ratio th(jc) P 3/5 Silicon Carbide SDA10S120 1400 1200 1000 800 600 400 ...

Page 4

... Package Dimensions: TO-220 SDA10S120 Rev 1.3 PRELIMINARY MILLIMETERS DIM MIN MAX A 4.191 4.699 A1 2.387 2.489 A2 1.219 1.321 b 0.635 0.889 b1 1.143 1.397 c 0.458 0.635 D 15.113 16.621 D1 9.017 9.271 e 5.080 E 9.677 9.931 H1 6.096 6.350 L 12.700 12.954 L1 3.048 3.302 Q 2.540 3.048 ØP 3.632 3.734 4/5 Silicon Carbide ...

Page 5

... Unless expressly approved in writing by an authorized representative of SemiSouth, SemiSouth products are not designed, authorized or warranted for use in military, aircraft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. SDA10S120 Rev 1.3 PRELIMINARY 5/5 Silicon Carbide ...

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